Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Memory management method and memory management device

A memory management and memory technology, applied in the field of memory, can solve the problems of increased frequency of data exchange, low overall efficiency of electronic systems, and reduced area capacity.

Active Publication Date: 2015-04-15
MEDIATEK INC
View PDF3 Cites 6 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the compressed area occupies part of the DRAM space, it is equivalent to reducing the available capacity of the working area, which may lead to an increase in the frequency of exchanging data between the working area and the compressed area
As is known to those skilled in the art to which the present invention pertains, the higher the frequency of data exchange, the lower the overall efficiency of the electronic system

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Memory management method and memory management device
  • Memory management method and memory management device
  • Memory management method and memory management device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] A specific embodiment according to the present invention is a memory management device, the functional block diagram of which is shown in figure 1 . It should be noted that the word "invention" here is used to refer to the inventive concepts presented in these embodiments, but its scope is not limited to the embodiments themselves. The memory management device 100 is suitable for a memory 200 including a working area 22 and a compressed area 24 . The working area 22 is used to store uncompressed data, and the compressed area 24 is used to store compressed data. The mapping table 26 is used to record the data mapping relationship between the working area 22 and the compressed area 24 .

[0030] The memory management device 100 of this embodiment includes a management module 12 and a compression / decompression module 14 . The management module 12 is used to determine whether to move the target data to the compressed area 24 according to the recent use index and the comp...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a memory management method and a memory management device. The memory management device is applicable to a memory which comprises a working region and a compressed region. The working region is used for storing uncompressed data. The memory management device comprises a management module and a compression / decompression module. The management module is used for determining whether or not to move target data stored in the working region to the compressed region according to a recent use index and a compression ratio of the target data. If the management module decides to move the target data to the compressed region; the compression / decompression module compresses the target data and moves the compressed target data to the compressed region.

Description

technical field [0001] The present invention is related to the memory management technology, and is especially suitable for the memory including a working area and a compressed area at the same time. Background technique [0002] Memory plays an indispensable role in most electronic products. Taking a computer system as an example, a dynamic random access memory (DRAM) is usually provided therein for temporarily storing various data or program codes required for system operation. The advantage of DRAM is its fast access speed, but its disadvantage is that its price is higher than that of hard disk or flash memory. In order to take into consideration both hardware cost and available temporary storage space, some electronic systems are designed to use a DRAM as the main storage and a part of a hard disk as the secondary storage. Data with a relatively high least recently used (LRU) index will be moved from the primary storage to the secondary storage, and will not be moved b...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G06F12/02
Inventor 童怡新林和源林佳纬杨弘伟
Owner MEDIATEK INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products