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Composition for a silica based layer, and silica based layer

A technology of silicon dioxide and composition, applied in the direction of silicon compounds, chemical instruments and methods, coatings, etc., can solve the problems of shrinking wires, deterioration of response speed, RC delay of semiconductor interconnections, etc., and achieve the effect of ensuring thickness uniformity

Inactive Publication Date: 2015-04-15
SAMSUNG SDI CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, high integration requirements of semiconductors may narrow the distance between wires, thereby causing RC delay, crosstalk, deterioration of response speed, etc. that may cause problems in semiconductor interconnection

Method used

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  • Composition for a silica based layer, and silica based layer
  • Composition for a silica based layer, and silica based layer
  • Composition for a silica based layer, and silica based layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0074] Dry nitrogen was replaced in a 2 L reactor equipped with a stirring device and a temperature controller. Subsequently, 1,500 g of dry pyridine was injected into the reactor, and the reactor was stored at 5°C. Then, 140 g of dichlorosilane was slowly injected thereinto over 2 hours. Then, 85 g of aqueous ammonia was slowly injected thereinto over 4.3 hours while stirring the mixture. Then, dry nitrogen gas was injected thereinto over 120 minutes, and ammonia remaining therein was removed.

[0075] Under a dry nitrogen atmosphere, the obtained white slurry product was filtered with a 1 μm TEFLON filter to obtain 1,000 g of a filtered solution. Subsequently, 1,000 g of dry xylene was added thereto, and the mixture was adjusted to have a solid content of 20% by repeatedly replacing xylene with pyridine using a rotary evaporator three times, and then, filtered with a TEFLON filter having a pore size of 0.1 μm.

[0076] Then, 250 g of dry pyridine was added to the obtained...

Embodiment 2

[0078] Dry nitrogen was replaced in a 2 L reactor equipped with a stirring device and a temperature controller. Subsequently, 1,500 g of dry pyridine was injected into the reactor, and the reactor was stored at 5°C. Then, 140 g of dichlorosilane was slowly injected thereinto over 2 hours. Then, 85 g of aqueous ammonia was slowly injected thereinto over 4.3 hours while stirring the mixture. Then, dry nitrogen gas was injected thereinto over 120 minutes, and ammonia remaining in the reactor was removed.

[0079] Under a dry nitrogen atmosphere, the obtained white slurry product was filtered with a 1 μm TEFLON filter to obtain 1,000 g of a filtered solution. Subsequently, 1,000 g of dry xylene was added thereto, and the mixture was adjusted to have a solid content of 20% by repeatedly replacing xylene with pyridine using a rotary evaporator three times, and then, filtered using a TEFLON filter having a pore size of 0.1 μm.

[0080]Then, 250 g of dry pyridine was added to the o...

Embodiment 3

[0082] Dry nitrogen was replaced in a 2 L reactor equipped with a stirring device and a temperature controller. Subsequently, 1,500 g of dry pyridine was injected into the reactor, and the reactor was stored at 5°C. Then, 140 g of dichlorosilane was slowly injected thereinto over 2 hours. Then, 85 g of aqueous ammonia was slowly injected thereinto over 4.3 hours while stirring the mixture. Then, dry nitrogen gas was injected thereinto over 120 minutes, and ammonia remaining in the reactor was removed.

[0083] Under a dry nitrogen atmosphere, the obtained white slurry product was filtered with a 1 μm TEFLON filter to obtain 1,000 g of a filtered solution. Subsequently, 1,000 g of dry xylene was added thereto, and the mixture was adjusted to have a solid content of 20% by repeatedly replacing xylene with pyridine using a rotary evaporator three times, and then, filtered with a TEFLON filter having a pore size of 0.1 μm.

[0084] Then, 250 g of dry pyridine was added to the o...

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Abstract

A composition for a silica based layer, a silica based layer, and a method of manufacturing a silica based layer, the composition including a solvent; and a silicon-containing polymer, the silicon-containing polymer having a weight average molecular weight of about 20,000 to about 160,000.

Description

[0001] References to related applications [0002] This application claims priority and benefit to Korean Patent Application Nos. 10-2013-0117498 and 10-2014-0110915 filed in the Korean Intellectual Property Office on October 1, 2013 and August 25, 2014, respectively, which are incorporated by reference The entire content is incorporated in this article. technical field [0003] The present disclosure relates to compositions for silica-based layers (silica-based layers, silica-based layers, silica-based layers), silica-based layers, and methods for manufacturing such silica-based layers. layer method. Background technique [0004] Due to accelerated development of semiconductor technology, research has been conducted on highly integrated and high-speed semiconductor memory cells having improved performance through increased integration of semiconductor chips having smaller sizes. However, high integration requirements of semiconductors may narrow the distance between wires...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09D183/16C09D183/00
CPCB05D3/0254C09D183/16C01B33/126B05D2518/10C08G77/54C08G77/62C09D183/14Y10T428/24479
Inventor 韩权愚郭泽秀金补宣朴银秀裵镇希徐珍雨李汉松任浣熙黄丙奎金相均赵娟振
Owner SAMSUNG SDI CO LTD
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