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Manufacturing method of ultrathin glass adapter plate

A production method and ultra-thin glass technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of affecting etching efficiency and reducing etching rate, achieve fewer process steps, improve reliability and speed , The effect of process cost reduction

Active Publication Date: 2015-04-01
NAT CENT FOR ADVANCED PACKAGING
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

When steam is used, the etching rate will be greatly reduced, affecting the etching efficiency

Method used

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  • Manufacturing method of ultrathin glass adapter plate
  • Manufacturing method of ultrathin glass adapter plate
  • Manufacturing method of ultrathin glass adapter plate

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Embodiment Construction

[0041] The technical solutions of the present invention will be further described below in conjunction with the accompanying drawings and through specific implementation methods.

[0042] see Figure 1 to Figure 8 As shown, in this embodiment, a method for manufacturing an ultra-thin glass adapter plate includes the following steps:

[0043] S100: slide cleaning and making seed layer: as figure 2 As shown, the silicon-based carrier 10 is cleaned, and after cleaning, a 200-500nm seed layer 11 is fabricated on the silicon-based carrier 10 by an electroless copper plating process;

[0044] S101: Apply a certain thickness of photoresist 12 on the top of the seed layer 11, and form an ultra-high-density, extremely small-sized blind hole 13 structure after a photolithography process, such as image 3 shown;

[0045] S102: using a bottom-up (bottom-up) electroplating process to manufacture metal copper pillars 14 seamlessly filled in blind holes 13, such as Figure 4 shown;

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Abstract

The invention discloses a manufacturing method of an ultrathin glass adapter plate. The manufacturing method comprises the following steps: (1) washing silicon-based slide glass and manufacturing a copper seed layer on the silicon-based slide glass; (2) coating the seed layer with photoresist with certain thickness, and implementing a photolithography technique to form a blind hole structure with ultrahigh density and extremely small size; (3) manufacturing a metal copper cylinder filling the blind hole in a seamless way by adopting a bottom-up electroplating technology; (4) removing the photoresist and the seed layer, and carrying out thermal annealing to form the metal copper cylinder on the silicon-based slide glass; (5) implementing a glass reflux technology so that a softened glass material completely surrounds the metal copper cylinder to form a seamless contact structure; (6) carrying out flattening on the glass material subjected to reflux and exposing the metal copper cylinder; (7) carrying out top layer wiring and bottom layer wiring. The manufacturing method of the ultrathin glass adapter plate can be used for manufacturing the ultrathin glass adapter plate which is provided with a vertical interconnecting structure with ultrahigh density and extremely small size. The manufacturing method disclosed by the invention is simple in process steps and relatively low in manufacturing cost.

Description

technical field [0001] The invention relates to a manufacturing method of a glass adapter plate, in particular to a manufacturing method of an ultra-thin glass adapter plate. Background technique [0002] In the three-dimensional stacked chip structure, the glass interposer has increasingly become a research hotspot because of its excellent electrical insulation, low manufacturing cost and good process compatibility. But making vias in glass and filling them with metal reliably is challenging. A variety of glass drilling methods have been proposed, such as laser drilling, dry etching, wet etching, and glass reflow. The disadvantage of laser drilling is that only a single hole can be drilled, and the time cost is high, and the damage such as microcracks on the hole wall during the laser drilling process will affect the reliability of the filling metal; the dry etching process has a slow etching rate, and generally It is not higher than 1um / min, and the cost is high; wet etc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/48H01L21/60
CPCH01L21/486H01L23/15H01L23/49827
Inventor 林来存王启东邱德龙
Owner NAT CENT FOR ADVANCED PACKAGING
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