Nanometer silicon concentric micro ring core er-doped laser device and manufacturing method thereof

Abstract

The invention discloses a nanometer silicon concentric micro ring core er-doped laser device and a manufacturing method of the nanometer silicon concentric micro ring core er-doped laser device. The laser device comprises a silicon substrate and a micro disc, the micro disc is connected with the silicon substrate through a micro disc supporting column formed on the silicon substrate and comprises a peripheral micro disc body and an inside micro disc body which are arranged coaxially, the inside micro disc body is directly formed on the peripheral micro disc body, the edge of the peripheral micro disc body is fused to form a micro ring core structure, the peripheral micro disc body is a silicon oxide thin film layer with the er-doped edge, and the inside micro disc body is a thin film layer with a silicon nano quantum dot structure. According to the nanometer silicon concentric micro ring core er-doped laser device, the good light gain characteristic of nanometer silicon is utilized, efficient light pumping is carried out on erbium ions, the spontaneous radiation probability is improved, meanwhile, absorption of carriers in the nanometer silicon or other loss factors cannot be introduced into the gain laser mode of the micro ring core edge erbium ions, and therefore high-quality communication waveband micro-cavity mode emitted light can be obtained.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronic devices, in particular to a nano-silicon concentric micro-ring-core erbium-doped laser device and a preparation method thereof. Background technique [0002] With the rapid development of the microelectronics industry, some inevitable defects in electrical interconnection are becoming more and more serious. Narrow bandwidth, leakage, and signal series have become problems that people must face. At the same time, Moore's Law will gradually come to an end. . At this time, the optical interconnection technology used to replace the electrical interconnection began to receive more and more attention. "Silicon photonics" compatible with CMOS and MEMS processes has also become a hot spot for many chip manufacturing companies and scientific research institutions today, but the silicon-based photonic interconnection chip system has also encountered a bottleneck problem, that is, effic...

AI Technical Summary

Problems solved by technology

However, the optical gain of erbium-doped silicon is limited by its very small light absorption cross-section and poor electrical conductivity

Images