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Gate line structure making local contact with obverse surface of solar battery and manufacturing method thereof

A solar cell and partial contact technology, which is applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of restricting the conversion efficiency of solar cells, using a large amount of silver paste, and restricting the manufacturing cost of solar cells.

Active Publication Date: 2015-03-25
TRINA SOLAR CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0002] At present, the front electrode of a traditional crystalline silicon solar cell is composed of several main grids and several thin grids perpendicular to each other. The large contact area restricts the conversion efficiency of solar cells. On the other hand, the large amount of silver paste used restricts the manufacturing cost of solar cells.

Method used

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  • Gate line structure making local contact with obverse surface of solar battery and manufacturing method thereof
  • Gate line structure making local contact with obverse surface of solar battery and manufacturing method thereof
  • Gate line structure making local contact with obverse surface of solar battery and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Such as figure 1 , 2 As shown, a grid line structure with partial contact on the front surface of a solar cell has a plurality of grid line electrodes 1, and each grid line electrode 1 has a plurality of sections of partial contact metal electrodes 11 and a plurality of sections of non-contact metal electrodes 12, and the partial contact metal electrodes 11 is electrically connected to the non-contact metal electrode 12, the non-contact metal electrode 12 is made of non-burn-through metal electrode paste, and the local contact metal electrode 11 passes through the dielectric film 2 of the battery to form an ohmic contact with the silicon substrate 3.

[0028] figure 1 In , the dotted line part in the gate line electrode 1 is the part not in contact with the silicon substrate 3 , and the realized part is the contact part with the silicon substrate 3 .

[0029] The local contact metal electrode 11 is made of a fire-through metal electrode paste, and the local contact me...

Embodiment 2

[0039] Such as figure 1 , 3 As shown, the grid line structure of this embodiment is basically the same as that of Embodiment 1, the difference is that each grid line electrode 1 is provided with a transmission electrode 13 made of a burn-through metal electrode paste, and the multi-section partial contact metal electrode 11 It is integrally made with the transfer electrode 13, and the transfer electrode 13 is also covered on the multi-segment non-contact metal electrode 12, and the finished solar cell has the same appearance as a conventional solar cell.

Embodiment 3

[0041] Such as figure 1 , 4 As shown, a grid line structure with partial contact on the front surface of a solar cell has a plurality of grid line electrodes 1, and each grid line electrode 1 has a plurality of sections of partial contact metal electrodes 11 and a plurality of sections of non-contact metal electrodes 12, and the partial contact metal electrodes 11 is electrically connected to the non-contact metal electrode 12, the non-contact metal electrode 12 is made of non-burn-through metal electrode paste, and the local contact metal electrode 11 passes through the dielectric film 2 of the battery to form an ohmic contact with the silicon substrate 3.

[0042] Such as image 3 As shown, the local contact metal electrode 11 is also made of non-burn-through metal electrode paste, the local contact metal electrode 11 and the non-contact metal electrode 12 are integrally made, and the local contact metal electrode 11 passes through the dielectric film 2 of the battery Afte...

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Abstract

The invention discloses a gate line structure making local contact with the obverse surface of a solar battery and a manufacturing method of the gate line structure. The gate line structure making local contact with the obverse surface of the solar battery is provided with a plurality of gate line electrodes. Each gate line electrode is provided with a plurality of local contact metal electrodes and a plurality of non-contact metal electrodes. The local contact metal electrodes are electrically connected with the non-contact metal electrodes. The non-contact metal electrodes are made of non-burnthrough metal electrode paste. The local contact metal electrodes penetrate through a dielectric film of the battery and then make ohmic contact with a silicon substrate. According to the gate line structure, it can be guaranteed that under the condition of avoiding electron transport, the metalized area is effectively reduced, and recombination current of a metalized area is reduced; accordingly, open-circuit voltage of the battery is effectively increased, and the conversion efficiency of the solar battery is improved.

Description

technical field [0001] The invention relates to a grid line structure with partial contact on the front surface of a solar cell and a preparation method thereof, belonging to the technical field of cell preparation. Background technique [0002] At present, the front electrode of a traditional crystalline silicon solar cell is composed of several main grids and several thin grids perpendicular to each other. The large contact area restricts the conversion efficiency of the solar cell. On the other hand, the large amount of silver paste used restricts the manufacturing cost of the solar cell. Contents of the invention [0003] The technical problem to be solved by the present invention is to overcome the defects of the prior art and provide a grid wire structure with partial contact on the front surface of the solar cell, which can effectively reduce the metallization area and reduce the metallization area while ensuring the avoidance of electron transport. The recombinati...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18
CPCH01L31/022433H01L31/186Y02E10/50Y02P70/50
Inventor 盛健
Owner TRINA SOLAR CO LTD
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