Magnetic sensor and preparation technology thereof
A technology of magnetic sensor and preparation process, which is applied in the field of preparation of three-axis magnetic sensor, sensor, and three-axis magnetic sensor, and can solve the problem of inability to manufacture the slit of the magnetic conduction unit and the induction unit, affect the photolithography, and prevent the exposure of the photoresist and other issues to achieve the effects of sensitivity improvement, performance optimization, and process simplification
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[0055] The present invention discloses a preparation process of a magnetic sensor. The preparation process includes the preparation process of a third-direction magnetic sensor device, which specifically includes the following steps:
[0056] [Step S1] A dielectric material is deposited on the substrate, such as silicon oxide, TEOS, silicon nitride, silicon oxynitride, etc., to form the first dielectric layer 10;
[0057] [Step S2] Please refer to Image 6 , An array of trenches 11 is formed on the first dielectric layer 10. In this embodiment, the width of the trench 11 is greater than half of the depth. The width of the opening of the trench 11 is greater than half of the depth; preferably, the width of the bottom of the trench 11 is greater than half of the depth of the trench.
[0058] [Step S3] Deposit the same or different second dielectric material on the above dielectric material (including trench), such as silicon oxide, TEOS, silicon nitride, tantalum oxide, tantalum nitri...
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