A high voltage esd protection device with ldmos‑scr interdigitated structure

Abstract

A high-voltage ESD protection device for LDMOS-SCR interdigital structures can be used for ESD protection circuits of on-chip high-voltage ICs, and is mainly composed of a P-type substrate, an N-type buried layer, an N well, a P well, a plurality of P<+> injection regions, a plurality of N<+> injection regions, a polycrystalline silicon double-gate and a plurality of field oxygen isolation areas. The ESD protection device can form two ESD current discharging paths formed by connecting the LDMOS-SCR structures in parallel under the high-voltage ESD pulse action. Both the current discharging paths take a parasitic NPN pipe and a P well resistor as a common branch, so that the electron emissivity of the device is reduced, the maintaining voltage is raised, and the ESD robustness is improved. On the other hand, a parasitic NPN transistor is designed in the device to control a floating LDMOS structure, so that the electron emissivity of the LDMOS-SCR devices is reduced, and the maintaining voltage is raised; the current discharging capacity of an N-type conducting channel of the floating LDMOS structure can also be improved, and the ESD robustness of the device is improved.

Description

technical field [0001] The invention belongs to the field of electrostatic protection of integrated circuits, relates to a high-voltage ESD protection device, in particular to a high-voltage ESD protection device with high sustain voltage and strong ESD robustness, which can be used to improve the reliability of on-chip high-voltage IC ESD protection. Background technique [0002] With the rapid development of power integration technology, electronic products are increasingly miniaturized and complex, and the demand for mobile hard disks, flash memory cards, USB interfaces, and smart phone display touch screens is increasing, and the reliability of on-chip high-voltage IC products is also becoming increasingly prominent. . For example, the flash memory card cannot read data suddenly, the USB interface cannot carry out data communication, and the reliability problems such as the sudden black screen of the display touch screen have attracted more and more attention. The high-...

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Problems solved by technology

However, on the one hand, because the ESD protection design is limited by the working characteristics of the protected circuit, and on the other hand, due to the increasing demand for electrostatic protection level of consumer electronics, it is difficult for the ESD protection design of the on-chip high-voltage IC to break through the bottleneck of the existing technology.

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