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P diffusion method of silicon wafer and preparation method of solar cell

A diffusion method and technology of silicon wafers, which are applied in circuits, electrical components, and final product manufacturing, etc., can solve problems such as unfavorable battery conversion efficiency and fluctuation, and achieve the effects of good economic benefits, improved conversion efficiency, and improved uniformity.

Active Publication Date: 2015-03-11
ZHEJIANG JINKO SOLAR CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to comprehensively consider factors such as output and efficiency in the production line of the prior art, the square resistance of silicon wafers in each tube obtained during the P diffusion process will fluctuate greatly, which is not conducive to improving the conversion efficiency of the battery

Method used

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  • P diffusion method of silicon wafer and preparation method of solar cell

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preparation example Construction

[0086] The present invention also provides a method for preparing a solar cell, comprising the following steps:

[0087] Etching the back side of the silicon wafer containing the PN junction prepared by the preparation method described in the above technical scheme;

[0088] Depositing an anti-reflection film on the front side of the etched silicon wafer;

[0089] Print silver paste on the front side of the silicon wafer with the anti-reflection film deposited as the positive electrode, print aluminum paste on the back of the silicon wafer with the anti-reflection film deposited as the back electric field, and print the aluminum paste on the back of the silicon wafer with the anti-reflection film deposited Printing silver-aluminum paste as the back electrode;

[0090] The silicon wafer printed with the positive electrode, the back electric field and the back electrode is sintered to obtain a solar cell.

[0091] According to the P diffusion method described in the above tech...

Embodiment 1

[0098] Select P-type polysilicon wafers of 156cm×156cm, and use acid solution for texturing and cleaning in the production line to form a textured surface;

[0099] P diffusion in a tubular diffusion furnace using a liquid source of phosphorus oxychloride:

[0100] Low-temperature boat feeding: put the textured polysilicon wafer into the tubular diffusion furnace, set the temperature of the furnace tube at 780°C, and feed 8L / min of N into the tubular diffusion furnace. 2 ;

[0101] The first temperature rise: control N after entering the boat 2 The flow rate is 6L / min, and the furnace tube is rapidly heated to 810°C at a heating rate of 12°C / min;

[0102] The first deposition: feed 7.5L / min of N into the tubular diffusion furnace 2 , 600mL / min O 2 and 900mL / min of N 2 -POCl 3 , N 2 -POCl 3 Medium N 2 and POCl 3 The volume ratio is 10:1, the furnace tube temperature is controlled at 810°C, and the deposition time is 8 minutes;

[0103] The first propulsion: feed 9L / m...

Embodiment 2

[0122] Select P-type polysilicon wafers of 156cm×156cm, and use acid solution for texturing and cleaning in the production line to form a textured surface;

[0123] P diffusion in a tubular diffusion furnace using a liquid source of phosphorus oxychloride:

[0124] Low-temperature boat feeding: put the textured polysilicon wafer into the tubular diffusion furnace, set the temperature of the furnace tube at 780°C, and feed 8L / min of N into the tubular diffusion furnace. 2 ;

[0125] The first temperature rise: control N after entering the boat 2 The flow rate is 6L / min, and the furnace tube is rapidly heated to 810°C at a heating rate of 12°C / min;

[0126] The first deposition: feed 7.5L / min of N into the tubular diffusion furnace 2 , 600mL / min O 2 and 950mL / min of N 2 -POCl 3 , N 2 -POCl 3 Medium N 2 and POCl 3 The volume ratio is 10:1, the furnace tube temperature is controlled at 810°C, and the deposition time is 10 minutes;

[0127] The first propulsion: feed 9L / ...

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Abstract

The invention provides a P diffusion method of a silicon wafer; a textured silicon wafer is subjected to P diffusion; in the P diffusion process, the steps of increasing the temperature for the first time, depositing for the first time, propelling for the first time, increasing the temperature for the second time, depositing for the second time, propelling for the second time, increasing the temperature for the third time, depositing for the third time, propelling for the third time, decreasing the temperature and absorbing impurities are carried out in sequence; by means of the depositing processes, the propelling processes and the impurity-absorbing processes step by step, the sheet resistance uniformity of the silicon wafer containing a PN junction is increased; the surface concentration and the junction depth are reduced; therefore, the conversion efficiency of the solar cell is effectively increased; furthermore, the method provided by the method is incapable of increasing existing production of production lines, and has better economic benefits.

Description

technical field [0001] The invention relates to the technical field of clean energy, in particular to a P diffusion method of a silicon wafer and a preparation method of a solar cell. Background technique [0002] In recent years, with the increasing consumption of traditional energy and the serious environmental problems caused by it, the photovoltaic industry has developed rapidly due to its non-polluting and inexhaustible characteristics. Solar cells are the core technology and the most cost-consuming part of the photovoltaic industry, so research on solar cells is the most important topic in the photovoltaic industry. [0003] The preparation of solar cells mainly includes the processes of cleaning texture, P diffusion, etching, PECVD, screen printing and sintering. Solar cells need a large-area PN junction to convert light energy into electrical energy. In the preparation process of solar cells, the purpose of P diffusion is to prepare the core component of solar cells...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/228H01L31/18
CPCH01L21/228H01L31/18Y02P70/50
Inventor 叶飞蒋方丹金浩陈康平
Owner ZHEJIANG JINKO SOLAR CO LTD
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