Low-voltage Diffusion Process for Crystalline Silicon Cells
A technology of crystalline silicon battery and diffusion process, which is applied in the field of diffusion process, can solve the problems that it is difficult to improve the uniformity of the longitudinal concentration distribution of inter-chip diffusion doping, reduce the service life of vacuum pumps, and restrict the uniformity of silicon wafer doping, etc., to achieve improved Consistency of longitudinal doping concentration distribution, improvement of contact probability, and improvement of the uniformity of inter-chip diffusion resistance
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[0037] A low-pressure diffusion process of the present invention comprises the following steps:
[0038] (1) High-temperature oxidation before diffusion: After the furnace mouth is closed, pump air to the set low pressure and oxidize at high temperature, and pre-grow nano-scale thickness SiO on the surface of the silicon wafer 2 ;
[0039] The specific four-step process steps are shown in Table 3:
[0040] Table 3: Process parameters of the first four steps of diffusion
[0041]
[0042] (2) Low-pressure diffusion: the step-by-step diffusion method is adopted to reduce the temperature difference in each temperature zone, improve the uniformity of diffusion resistance value between sheets and the consistency of vertical doping concentration distribution, reduce the production cost of the diffusion process and reduce the performance requirements of vacuum pumps. Purpose.
[0043] The specific diffusion steps are as follows:
[0044] The first step is low-pressure pre-diff...
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