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A kind of method of ion implantation regulating and controlling the resistance value of tantalum nitride thin film resistor

A technology of thin film resistors and ion implantation, which is applied in the direction of resistors, resistor manufacturing, circuits, etc., can solve problems such as the performance impact of tantalum nitride, and achieve the effect of controlling the resistance value

Active Publication Date: 2017-11-07
GUANGZHOU AURORA TECHNOLOGIES CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the thermal oxidation method will not leave gaps on the surface of tantalum nitride, due to the formation of a layer of Ta2O5 on the surface, its properties are completely different from those of tantalum nitride, which will inevitably affect the performance of tantalum nitride.
Therefore, the laser correction method and the thermal oxidation method to adjust the resistance value of the tantalum nitride film have their own limitations.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] A method for regulating and controlling the resistance value of a tantalum nitride film resistance by ion implantation, comprising the following steps:

[0020] Step 1: Place a tantalum nitride film resistor with an initial resistance value of 33.16Ω and an initial nitrogen atom content of 48% in the tantalum nitride film in the ion implantation device;

[0021] The second step: evacuate to 1.0×10-4Pa;

[0022] Step 3: Fill the nitrogen with a purity of 99.99%, and maintain the vacuum of the chamber at 0.1Pa;

[0023] Step 4: Start the ion implantation power supply, set the voltage to 300V, and ion implantation time to 1min;

[0024] Step 5: After the injection, continue to fill with nitrogen until 1.01×105Pa;

[0025] Step 6: Take out the thin film resistor.

[0026] The nitrogen atom content of the thin film resistor is tested by EDS, and the test result shows that the nitrogen atom content is 51.0%; the resistance value of the thin film resistor is measured, and t...

Embodiment 2

[0028] A method for regulating and controlling the resistance value of a tantalum nitride film resistance by ion implantation, comprising the following steps:

[0029] Step 1: Place a tantalum nitride film resistor with an initial resistance value of 42.35Ω and an initial nitrogen atom content of 52% in the tantalum nitride film in the ion implantation device;

[0030] The second step: vacuumize to 1.0×10-5Pa;

[0031] Step 3: Fill the nitrogen with a purity of 99.99%, and maintain the vacuum of the cavity at 10Pa;

[0032] Step 4: Start the ion implantation power supply, set the voltage to 5000V, and ion implantation time to 1min;

[0033] Step 5: After the injection, continue to fill with nitrogen until 1.01×105Pa;

[0034] Step 6: Take out the thin film resistor.

[0035] The nitrogen atom content of the thin film resistor is tested by EDS, and the test result shows that the nitrogen atom content is 58.1%; the resistance value of the thin film resistor is measured, and t...

Embodiment 3

[0037] A method for regulating and controlling the resistance value of a tantalum nitride film resistance by ion implantation, comprising the following steps:

[0038] Step 1: Place a tantalum nitride film resistor with an initial resistance value of 42.18Ω and an initial nitrogen atom content of 48% in the tantalum nitride film in the ion implantation device;

[0039] The second step: evacuate to 1.0×10-4Pa;

[0040] Step 3: Fill the nitrogen with a purity of 99.99%, and maintain the vacuum of the chamber at 0.1Pa;

[0041] Step 4: ion implantation power supply, set the voltage to 300V, and ion implantation time to 3h;

[0042] Step 5: After the injection, continue to fill with nitrogen until 1.01×105Pa;

[0043] Step 6: Take out the thin film resistor.

[0044] The nitrogen atom content of the thin film resistor is tested by EDS, and the test result shows that the nitrogen atom content is 57.3%; the resistance value of the thin film resistor is measured, and the resistanc...

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Abstract

The invention discloses a method for regulating and controlling the resistance value of tantalum nitride film resistance by ion implantation. The tantalum nitride film resistance that needs to be implanted with nitrogen ions is placed in the workpiece placement area of ​​ion implantation equipment, and the ion implantation equipment is vacuumed to 1.0×10- Between 4-1.0×10-5Pa, fill the ion implantation equipment with high-purity nitrogen gas with a purity greater than or equal to 99.99%, so that the vacuum degree of the ion implantation chamber is maintained between 0.1-10Pa, start the injection power supply, and nitrogen ionization, Nitrogen ions enter the tantalum nitride film, that is, the implantation is completed, turn off the ion implantation power supply, continue to fill the cavity with nitrogen gas until 1.01×105Pa, open the cavity, and take out the thin film resistor; the method of ion implantation to adjust the resistance value of the tantalum nitride thin film The content of N atoms is regulated by ion implantation, so as to achieve the purpose of controlling the resistance value of the tantalum nitride thin film resistor.

Description

technical field [0001] The invention relates to a method for regulating and controlling the resistance value of a tantalum nitride film resistance by ion implantation. Background technique [0002] Resistors are one of the most widely used passive components in circuits. They mainly play the roles of power supply decoupling, transistor operating point bias, network matching and interstage coupling in circuits. [0003] At present, there are mainly two processes for the preparation of resistors, one is thick film process and the other is thin film process. The thick film process is to print the resistor paste on the ceramic substrate by screen printing, and then process it into a resistor by combining other processes. The patents with publication numbers CN1525498A and CN101203922A are typical thick film process patents for preparing resistors. . The thin-film process uses sputtering, evaporation and other processes to deposit resistors on the substrate, and processes resis...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01C17/075
Inventor 庄彤丁明建李杰成李锦添杨俊峰
Owner GUANGZHOU AURORA TECHNOLOGIES CO LTD
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