Voltage level switching circuit

Abstract

The invention provides a voltage level switching circuit. The voltage level switching circuit comprises a first transistor, a second transistor, a third transistor, a fourth transistor, a fifth transistor, a sixth transistor, a seventh transistor and an eighth transistor. The sixth transistor and the seventh transistor are arranged to provide equivalent high resistance, and the latch capacity of the third transistor and the fourth transistor is reduced. When the voltage difference of the input voltage is in a low level, the state of the circuit can be switched smoothly. The fifth transistor and the eighth transistor are arranged to provide a breakover path, the rising time or the falling time of output signals can be shortened. Under the demand of the same switching time, compared with the prior art, the voltage level switching circuit is advantaged in that the layout area and dynamic current consumption can be reduced.

Description

technical field [0001] The invention relates to a conversion circuit, in particular to a voltage level conversion circuit. Background technique [0002] A voltage level conversion circuit is a conversion circuit widely used in current electronic circuits, and is used for converting signals between different voltage levels. [0003] refer to figure 1 , there is a voltage level conversion circuit ( figure 1 Using an N-Type voltage level conversion circuit for illustration) includes a first transistor M1 , a second transistor M2 , a third transistor M3 , and a fourth transistor M4 . [0004] The first transistor M1 has a first terminal outputting an inverted output signal OUTB, a second terminal electrically connected to a low level voltage VN, and a control terminal receiving an input signal IN. [0005] The second transistor M2 has a first terminal outputting an output signal OUT, a second terminal electrically connected to the low level voltage VN, and a control terminal ...

AI Technical Summary

Problems solved by technology

[0010] However, when the voltage levels of the input signal IN and the inverted input signal INB are close to the threshold voltages of the input stage transistors (namely, the first transistor M1 and the second transistor M2), they will encounter difficulty in transition, which will easily cause There is a direct current (DC) current in the circuit when it is static, resulting in leakage current in the circuit

[0011] Generally, in order to overcome this problem, the dynamic current of the input stage transistor will be increased by increasing the width of the input stage transistor, or the channel length (channel length) of the transistor of the latch circuit (that is, the third transistor M3 and the fourth transistor M4) will be increased. ) to reduce the ability of the latch circuit, but the former not only increases the power consumption but also increases the layout area and increases the circuit cost. The latter is an N type Metal-Oxide-Semiconductor field-effect transistor for the input stage transistor. Field-Effect Transistor, abbreviated as N-MOSFET), will increase the rise time (rising time) of the output signal OUT and the inverted output signal OUTB. For the input stage transistor, it is a P-type metal oxide semi-field effect transistor (P-MOSFET ) (such as figure 2 shown), it will increase the falling time (falling time) of the output signal OUT and the inverted output signal OUTB, resulting in an increase in the transition time

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