Charging device and method for multielement compound polycrystal material dual-temperature-region synthesis

Abstract

The invention discloses a charging device for multielement compound polycrystal material dual-temperature-region synthesis and a method for charging the multielement compound polycrystal material by using the charging device. The charging device comprises a charging component, a vacuum seal component and a melting component. The method comprises the following steps: charging a simple substance with lower steam pressure in the multielement compound to be synthesized into the bottom of the charging component, vacuumizing the charging component filled with the simple substance, slightly melting, fixing the simple substance to the bottom of the charging component, charging the final simple substance in the multielement compound to be synthesized into the charging component, carrying out vacuum sealing and the like, and inverting the charging component to naturally separate the finally filled simple substance from the firstly filled simple substance, thereby implementing charging. The device can well separate the raw materials for synthesis, increase the synthetic quantity of the polycrystal material, lower the charging difficulty, lower the technical production difficulty of the charging device for synthesis, and reduce the cost.

Description

technical field [0001] The present invention relates to a charging device for the synthesis of multi-component polycrystalline materials, in particular to a charging device used in the synthesis of multi-component polycrystalline materials in dual temperature zones. The invention also relates to the use of polycrystalline materials in dual temperature zones The invention relates to a method for charging multi-component compound polycrystalline material with a charging device for synthesis. Background technique [0002] The most common method for crystal growth of multivariate compounds is the melt growth method. The melt growth method is to raise the polycrystalline material of the synthesized multi-component compound above the melting point to make it fully melted, and then use the corresponding growth process to slowly cool down to below the melting point according to the properties of the crystal to obtain the corresponding multi-component compound single crystal. method...

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Problems solved by technology

[0003] Although the dual-temperature zone synthesis method has solved the problem that the synthesis device is easy to burst, it also has high requirements for the synthesis device. In actual use, the common synthesis devices often have the following problems: 1) The simple substance of the raw material is loaded After that, it cannot be positioned, and it is easy to mix between the simple substances during vacuum sealing, causing some simple substances with high vapor pressure to be heated at high temperature, causing the device to burst; 2) The synthesis device is generally small in diameter. Either the processing link is added before the raw materials are loaded, or a large amount of loading time is spent when the raw materials are loaded, and at the same time, the single synthesis amount of the polycrystalline material is less; 3) The structure of the synthesis device is complicated, which leads to The production process is complex and the production cost is high. On the other hand, it is difficult to vacuumize the synthesis, making it difficult to vacuum seal the device.

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