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Electrode structure, thin film transistor, array substrate and display panel

A technology of thin film transistors and electrode structures, which is applied in the direction of transistors, electric solid-state devices, circuits, etc., and can solve problems affecting the performance of thin film transistors, etc.

Active Publication Date: 2015-01-21
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, because copper atoms are easy to diffuse between the film layers, copper is used to make electrode lines and electrodes, and copper atoms in the electrodes will diffuse to the active layer of the thin film transistor, thereby affecting the performance of the thin film transistor

Method used

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  • Electrode structure, thin film transistor, array substrate and display panel
  • Electrode structure, thin film transistor, array substrate and display panel
  • Electrode structure, thin film transistor, array substrate and display panel

Examples

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Effect test

example 1

[0056] preparation figure 1 The electrode structure shown may specifically include the following steps:

[0057] (1) The first metal thin film 15 is formed on the base substrate 10 by sputtering, such as Figure 3a shown;

[0058] Specifically, the material of the first metal thin film may be copper (Cu) or a copper alloy, which is not limited herein.

[0059] (2) Patterning the first metal thin film 15 to form the pattern of the first metal layer 11, such as Figure 3b shown;

[0060] (3) take the first metal layer 11 as the metal catalyst substrate and the growth substrate for preparing graphene, adopt the CVD method to form the first graphene layer 12 on the first metal layer 11, as figure 1 shown.

[0061] Specifically, in specific implementation, it is better to form the first graphene layer as single-layer graphene.

example 2

[0063] preparation figure 2 The electrode structure shown may specifically include the following steps:

[0064] (1) The second metal thin film 16 is formed on the base substrate 10 by sputtering, such as Figure 4a shown;

[0065] Specifically, the material of the second metal thin film is copper alloy. Further, the copper alloy may be binary or multi-component alloys such as copper-molybdenum, copper-calcium, copper-magnesium, copper-manganese, copper-magnesium-aluminum, etc., which is not limited herein.

[0066] (2) Patterning the second metal film 16 to form the pattern of the second metal layer 13, such as Figure 4b shown;

[0067] (3) take the second metal layer 13 as the metal catalyst substrate and the growth substrate for preparing graphene, adopt the CVD method to form the second graphene layer 14 on the second metal layer 13, as Figure 4c shown;

[0068] Specifically, it is better to form the second graphene layer as single-layer graphene.

[0069] (4) Th...

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Abstract

The invention discloses an electrode structure, a thin film transistor, an array substrate and a display panel. The electrode structure at least comprises a first metal layer and a first graphene layer which are stacked, wherein the first metal layer is made of copper or copper alloy. Because graphene is of a stable single-layer hexagon structure composed of carbon atoms, has a high charge migration rate, and can be strongly combined with copper atoms and adsorb copper atoms well, through the adsorption and blocking effects of the first graphene layer on the copper atoms in the first metal layer, the copper atoms in the electrode structure can be effectively prevented from dispersing; meanwhile, because graphene has very high conductivity, through the compound structure formed by the graphene layer and the metal layer, the conductivity of the electrode structure can be further improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an electrode structure, a thin film transistor, an array substrate and a display panel. Background technique [0002] With the continuous development of semiconductor display technology, the display panel has higher and higher requirements on the conductivity of the electrode lines on the thin film transistor array substrate and the electrodes of the thin film transistors. Especially in high-resolution products, in order to increase the aperture ratio, it is necessary to reduce the line width of the electrode lines on the basis of ensuring electrical conductivity; in large-size products, in order to ensure the refresh rate of the screen, it is necessary to reduce the resistance of the electrode lines. [0003] As a low-resistance and cheap metal, copper is easier to achieve low line width, low power consumption and high Conductivity, so as to improve the display effect of...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/786H01L29/41
CPCH01L27/1214H01L29/41725H01L29/4232H01L29/786
Inventor 何晓龙姚琪曹占锋李正亮孔祥春张斌高锦成
Owner BOE TECH GRP CO LTD
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