Carrier recombination lifetime test system adopting scanning type microwave reflection method and test method

Abstract

The invention discloses a carrier recombination lifetime test system adopting a scanning type microwave reflection method and a test method. The test system comprises a pulse laser system, a microwave system, a data acquisition system, a scanning motion system, a motion control system, a test control system and a probe, wherein the scanning motion system is used for carrying out three-dimensional positioning on the probe; the motion control system is respectively connected with the scanning motion system and the test control system and is used for driving the scanning motion system to act according to a test control system instruction; both the pulse laser system and the microwave system are arranged in the probe, the microwave system is connected with the data acquisition system, and the data acquisition system is connected with the test control system. The pulse laser system generates pulsed infrared laser, passes through an intermediate opening of a microstrip antenna in the microwave system and vertically radiates onto the surface of a tested sample on a sample table. The carrier recombination lifetime test system adopting scanning type microwave reflection method and the test method have the benefits that the scanning measurement for carrier lifetime distribution can be carried out on a large-area semiconductor crystal material, the structure is more compact, and the probe size is small.

Description

technical field [0001] The invention relates to the research field of a carrier recombination life tester, in particular to a carrier recombination life test system and a test method using a scanning microwave reflection method. Background technique [0002] In the production process of semiconductor materials and devices, almost all the production equipment used contain metals. Therefore, the pollution of heavy metals (mainly iron) to semiconductor materials is a common problem, which seriously affects the performance of semiconductor crystal materials. The carrier recombination life is one of the important parameters to evaluate the performance of semiconductor materials. It can sensitively reflect the content of heavy metals. Therefore, the carrier recombination life tester is an It is an important tool in the research and production of photovoltaic enterprises and colleges and universities. [0003] At present, there are many kinds of carrier recombination life testers,...

AI Technical Summary

Problems solved by technology

However, in the above-mentioned life testers, most of them can only test the local area of ​​the semiconductor crystal material, and cannot measure the distribution of the carrier lifetime of the whole block (ingot) or the whole semiconductor crystal material, and the semiconductor The larger the measurement area of ​​the crystal material, the more complete and true the quality of the material can be reflected

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