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Solar cell, method for manufacturing solar cell, and solar cell module

A solar cell and manufacturing method technology, applied in electrical components, circuits, semiconductor devices, etc., can solve problems such as complicated processes, and achieve the effects of easy electrode formation and excellent photoelectric conversion characteristics

Inactive Publication Date: 2016-11-30
MITSUBISHI ELECTRIC CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, such a method of locally changing the surface shape on the light-receiving surface side of the semiconductor substrate becomes complicated in process, and cannot be said to be a method suitable for mass production.

Method used

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  • Solar cell, method for manufacturing solar cell, and solar cell module
  • Solar cell, method for manufacturing solar cell, and solar cell module
  • Solar cell, method for manufacturing solar cell, and solar cell module

Examples

Experimental program
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Effect test

Embodiment approach 1

[0038] figure 1 It is a flowchart for explaining an example of the manufacturing process of the solar battery cell concerning Embodiment 1 of this invention. Figure 2-1~Figure 2-9 It is a main part cross-sectional view for demonstrating an example of the manufacturing process of the solar battery cell concerning Embodiment 1 of this invention. image 3 It is a main part perspective view showing the schematic structure of the solar battery cell concerning Embodiment 1 produced by the manufacturing method of the solar cell cell concerning Embodiment 1. Be clarified, although in figure 1 It is not described in the following description, but the immersion treatment in hydrofluoric acid and the water washing treatment for the purpose of wafer cleaning treatment and natural oxide film removal are performed as necessary between each process.

[0039] First, as a semiconductor substrate, for example, a p-type single crystal silicon substrate (hereinafter, referred to as a p-type silicon ...

Embodiment approach 2

[0092] Figure 8 It is a flowchart for explaining an example of the manufacturing process of the solar battery cell concerning Embodiment 2 of this invention. Although the case where phosphor glass is removed after laser irradiation is described in Embodiment 1, the order of laser irradiation and phosphor glass removal is not limited to this. The order of laser irradiation and phosphor glass removal may be reversed, that is, laser irradiation is performed after the phosphor glass is removed.

[0093] Phosphorus oxychloride (POCl 3 ) After the thermal diffusion of the gas, the (inactive) phosphorus (P) that has not been electrically activated exists on the surface of the silicon substrate. If laser irradiation is performed in this state, the inactive phosphor (P) is activated by the laser irradiation, and the activated phosphor (P) diffuses to a deeper area of ​​the silicon substrate to form an SE structure. Thereafter, if water vapor oxidation or pyrolytic oxidation is performed...

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Abstract

The present invention relates to a solar cell, a method for manufacturing the solar cell, and a solar cell module. The solar cell includes: a semiconductor substrate of the first conductivity type having an impurity diffusion layer in which an impurity element of the second conductivity type is diffused on one side; A passivation film composed of a film; an anti-reflection film formed on a passivation film made of a light-transmitting material having a refractive index different from the above-mentioned oxide film; electrically connected to the impurity diffusion layer and formed on one side of the semiconductor substrate The formed light-receiving side electrode; and the back-side electrode formed on the other side of the above-mentioned semiconductor substrate, and the impurity diffusion layer includes: a first impurity diffusion layer that is a light-receiving region and contains an impurity element at a first concentration; and a light-receiving region. The lower region of the surface side electrode contains a second impurity diffusion layer with an impurity element at a second concentration higher than the first concentration, the surfaces of the first impurity diffusion layer and the second impurity diffusion layer are formed in a uniform surface state, and the second impurity diffusion layer The film thickness of the passivation film on the diffusion layer is thinner than the film thickness of the passivation film on the first impurity diffusion layer.

Description

Technical field [0001] The invention relates to a solar cell, a manufacturing method of the solar cell, and a solar cell module. Background technique [0002] In order to increase the efficiency of solar cells, it is necessary to suppress the recombination of carriers. One of the methods is the Selective Emitter (hereinafter referred to as SE) structure. A general crystalline silicon (Si) solar cell is structured with an anti-reflection film formed on the photoelectric conversion part where a pn junction is formed, a comb-shaped electrode is arranged on the surface (light-receiving surface), and a full-surface electrode is arranged on the back surface. The structure. This type of solar cell is called a homogeneous emitter cell (Homogeneous Emitter cell: hereinafter referred to as HE cell). [0003] In terms of the characteristics of solar cells, it is known that the impurity concentration on the outermost surface of the light-receiving area (the interface between the anti-reflect...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/0352H01L31/18
Inventor 西本阳一郎
Owner MITSUBISHI ELECTRIC CORP
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