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Method for filling contact holes in aluminum metal process

A filling method and contact hole technology, which is applied in the manufacture of electrical components, circuits, semiconductors/solid-state devices, etc., can solve the problems affecting device performance, poor fluidity of cold aluminum, and fast film formation of hot aluminum, etc., to improve the step coverage Effect

Active Publication Date: 2019-06-11
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, in the hole filling process, due to the poor fluidity of cold aluminum, it is generally used as early adhesion during hole filling, while hot aluminum has high fluidity and can be effectively filled into the contact hole. At the same time, hot aluminum has a faster film forming speed. It is easy to create voids when the aluminum is not completely filled (such as figure 1 -2), which seriously affects the performance of the device

Method used

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  • Method for filling contact holes in aluminum metal process
  • Method for filling contact holes in aluminum metal process
  • Method for filling contact holes in aluminum metal process

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Embodiment Construction

[0036] The filling method of aluminum metal process contact hole of the present invention, its flow chart is as image 3 shown, including the following steps:

[0037] 1) According to the conventional method, on the silicon substrate 1, the etching of the contact hole 2 is carried out (such as Figure 4 shown);

[0038] 2) The method of physical sputtering film formation (sputtering temperature 10-500°C, sputtering pressure 1-10torr) is used to fill the first barrier layer 3 (such as Figure 5 shown);

[0039] Wherein, the material of the first barrier layer 3 may be TiN; the thickness of the first barrier layer 3 may be 15-80nm;

[0040] 3) On the surface of the first barrier layer 3, a method of physical sputtering with low temperature and high power (sputtering temperature 10-300°C, sputtering power 10-15kw) is used to form a film (sputtering pressure can be 1-10torr) Carry out the filling of the first metal aluminum layer 4 (such as Figure 6 shown);

[0041] Wherein...

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Abstract

The invention discloses a filling method of an aluminum metal process contact hole. The method comprises the following steps that (1) contact hole etching is carried out on a silicon base plate; (2) the filling of a first blocking layer is carried out; (3) the filling of a first metal aluminum layer is carried out on the surface of the first blocking layer; (4) the filling of a second metal aluminum layer is carried out in a contact hole; (5) the filling of a third metal aluminum layer is carried out on the surfaces of the first metal aluminum layer and the second metal aluminum layer; (6) a second blocking layer is formed on the third metal aluminum layer; (7) metal aluminum wire pattern etching is carried out. The method provided by the invention can be used for effectively carrying out metal aluminum filling, and the generation of holes is avoided.

Description

technical field [0001] The invention relates to a method for filling a contact hole in the field of semiconductors, in particular to a method for filling a contact hole in an aluminum metal process. Background technique [0002] The metal aluminum hole filling process has a crucial influence on the characteristics of semiconductor devices, especially the conduction resistance of the device. Due to the trend of semiconductor process integration, the performance of semiconductor chips is becoming more and more abundant, accompanied by the concentration of circuits caused by the degree of integration of semiconductor chips, the integration process is becoming more and more complex, and the requirements for hole filling processes are becoming more and more stringent. [0003] However, in the hole filling process, due to the poor fluidity of cold aluminum, it is generally used as early adhesion during hole filling, while hot aluminum has high fluidity and can be effectively fille...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/768
CPCH01L21/76897
Inventor 刘善善
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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