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Calculation method of deviation rate and secondary ion mass spectrometry analysis method

A technology of secondary ion mass spectrometry and calculation methods, which is applied in the field of semiconductor manufacturing, can solve the problems of incomplete analysis of ion implantation results, etc., and achieve the effect of shortening the detection time of re-machines and saving use

Active Publication Date: 2017-07-11
SEMICON MFG INT (SHANGHAI) CORP
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Problems solved by technology

[0009] The purpose of the present invention is to provide a calculation method of deviation rate and a secondary ion mass spectrometry analysis method to solve the problem of incomplete analysis of ion implantation results in the prior art

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  • Calculation method of deviation rate and secondary ion mass spectrometry analysis method
  • Calculation method of deviation rate and secondary ion mass spectrometry analysis method
  • Calculation method of deviation rate and secondary ion mass spectrometry analysis method

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Embodiment Construction

[0040] It has been mentioned in the background technology that at present, due to the incomplete analysis method, the inconsistency of the SIMS image caused by the angle deviation of ion implantation cannot obtain effective results. The inventor found in the research that the angle of ion implantation The image fluctuation caused by the deviation is acceptable within a certain range, and further research shows that the angle deviation of ion implantation has a fixed relationship with the image, which is called the deviation rate and is denoted as K. After using the deviation rate, it can effectively solve the problem that it is difficult for technicians to judge whether the result is acceptable when there is a slight abnormality in the SIMS image.

[0041] The calculation method of the deviation rate and the secondary ion mass spectrometry analysis method provided by the present invention will be further described in detail below in conjunction with the accompanying drawings an...

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Abstract

The invention discloses a deviation rate calculation method and a secondary ion mass spectrometry analysis method. Including providing the sample to be tested and the standard sample, and integrating the sample to be tested and the standard sample in the same coordinate system; and performing Gaussian smoothing on the sample to be tested and the standard sample while ensuring that the area and curvature of the area remain unchanged processing; the processed sample to be tested and the standard sample are subjected to a point-to-point division process to obtain a fitting curve; the available area is defined in the fitting curve; the deviation rate is obtained from the available area; the ion implantation angle is obtained The deviation is proportional to the deviation rate, so that it can be clearly judged whether the equipment needs maintenance, saving time and consumables; and it can detect the early minor abnormalities of the ion implanter and give the direction of improvement.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a calculation method of deviation rate and a secondary ion mass spectrometry (Secondary Ion Mass Spectroscopy, SIMS) method. Background technique [0002] Secondary ion mass spectrometry (SIMS) is an analysis method that uses mass spectrometry to analyze the secondary ions generated by sputtering after the primary ions enter the target, so as to obtain the elemental information of the surface or depth profile of the material. [0003] SIMS can analyze all elements including hydrogen and can give isotope information, and analyze compound components and molecular structures. Secondary ion mass spectrometry has high sensitivity, which can reach the order of ppm or even ppb. In the semiconductor manufacturing industry, it is mainly used to provide data basis for the inspection of limited process and the development of more advanced process. [0004] The accuracy of ion im...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N23/225
Inventor 史江北李震远郑晓刚李爱民刘竞文
Owner SEMICON MFG INT (SHANGHAI) CORP
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