Preparation method for low-resistivity low-temperature P type aluminum gallium nitride materials

A low-resistivity, aluminum-gallium-nitride technology, applied in circuits, electrical components, semiconductor devices, etc., can solve problems such as severe acceptor compensation, achieve the effects of improving luminous intensity, low resistivity, and reducing series resistance

Active Publication Date: 2014-12-10
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

The other is that the acceptor compensation effect in P-type gallium nitride material is serious

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  • Preparation method for low-resistivity low-temperature P type aluminum gallium nitride materials
  • Preparation method for low-resistivity low-temperature P type aluminum gallium nitride materials

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[0016] see figure 1 As shown, the present invention provides a method for preparing a low-resistivity low-temperature P-type aluminum gallium nitride material, comprising the following steps:

[0017] Step 1: heating up a substrate, heat treatment in a hydrogen environment, and removing impurities on the surface of the substrate. The material of the substrate is sapphire, silicon carbide or gallium nitride, and the heating temperature of the substrate is 1050-1080°C:

[0018] Step 2: grow a low-temperature nucleation layer on the substrate, the growth temperature of the low-temperature nucleation layer is 500-600°C, and the thickness is 20-30nm, and the material of the low-temperature nucleation layer is gallium nitride or aluminum nitride , the low-temperature nucleation layer provides nucleation centers for subsequent growth materials;

[0019] Step 3: grow an unintentionally doped template layer on the low-temperature nucleation layer, the material of the unintentionally ...

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Abstract

A preparation method for low-resistivity low-temperature P type aluminum gallium nitride materials comprises the following steps of step 1, warming a substrate and performing thermal treatment under the hydrogen material environment; step 2, enabling a layer of low-temperature nucleating layer to grow on the substrate and providing a nucleation center for follow-up epitaxial growth; step 3, enabling a layer of unintentional doping template layer to grow on the low-temperature nucleating layer; step 4, enabling a layer of P type aluminum gallium nitride layer with low carbon impurity concentration to grow on the unintentional doping template layer in a epitaxial mode under low temperature to form into an epitaxial wafer; step 5, annealing the epitaxial wafer with high temperature under nitrogen environment to enable an acceptor in the P type aluminum gallium nitride layer to be active and obtain the P type aluminum gallium nitride layer materials with low resistivity. The preparation method for the low-resistivity low-temperature P type aluminum gallium nitride materials can reduce the concentration of unintentional doping carbon impurities in the low-temperature developed P type aluminum gallium nitride materials, accordingly relieving the acceptor compensation function and achieving the purpose of reducing the P type material resistivity.

Description

technical field [0001] The invention relates to the technical field of semiconductor material preparation, in particular to a method for preparing a low-resistivity, low-temperature P-type aluminum gallium nitride material. Background technique [0002] Blue-green light-emitting diodes (LEDs) have extremely important applications in the fields of display, control and communication, and have become an indispensable component in current full-color displays and traffic signal signs. Blu-ray laser diodes (LDs) are used in high-density storage discs to increase the storage density by nearly four times compared with red laser diodes, which can better meet the needs of the information age. In addition, blue laser diodes also have great application value in medical diagnosis and submarine exploration. [0003] However, in order to obtain a longer luminous wavelength, the active regions of blue-green LEDs and LDs must adopt a multi-quantum well structure with high indium composition...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L33/00H01L33/30
CPCH01L33/0062
Inventor 杨静赵德刚陈平刘宗顺江德生
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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