Sputtering target and manufacturing method thereof

A sputtering target and oxide technology, applied in sputtering coating, vacuum evaporation coating, ion implantation coating and other directions, can solve problems such as difficulty in high density, achieve stable sputtering, improve yield, and high transmittance Effect

Active Publication Date: 2016-11-09
JX NIPPON MINING & METALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the above-mentioned component system, when the sintering temperature is increased to achieve high density, it is difficult to increase the density due to the decomposition (evaporation) of ZnO.

Method used

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  • Sputtering target and manufacturing method thereof
  • Sputtering target and manufacturing method thereof
  • Sputtering target and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0088] Prepare ZnO powder equivalent to 4N of 5 μm or less, MgO powder equivalent to 4N with an average particle diameter of 5 μm or less, and Al equivalent to 4N with an average particle diameter of 5 μm or less. 2 o 3 Powder, SiO equivalent to 4N with an average particle size of 5 μm or less 2 Powder, B equivalent to 4N with an average particle size of 5 μm or less 2 o 3 pink.

[0089] Next, these powders were prepared into the compounding ratio shown in Table 2, and after mixing, hot pressing (HP) was performed at the temperature of 1050 degreeC. The pressure of hot pressing is set to 220kg / cm 2 .

[0090] As shown in Table 2, the ratio of raw materials is set to ZnO powder: 72.0 mol%, MgO powder: 24.6 mol%, Al 2 o 3 Powder: 1.2 mol%, SiO 2 Powder: 2.2 mol%, the total is 100 mol%, and it is made into a basic raw material. Then, further fit B into it 2 o 3 Powder: 1.0% by weight, made into sintered raw material. After sintering, the sintered body is finished into...

Embodiment 2

[0103] Prepare ZnO powder equivalent to 4N of 5 μm or less, MgO powder equivalent to 4N with an average particle diameter of 5 μm or less, and Al equivalent to 4N with an average particle diameter of 5 μm or less. 2 o 3 Powder, SiO equivalent to 4N with an average particle size of 5 μm or less 2 Powder, B equivalent to 4N with an average particle size of 5 μm or less 2 o 3 pink.

[0104] Next, these powders were prepared into the compounding ratio shown in Table 2, and after mixing, hot pressing (HP) was performed at the temperature of 1050 degreeC. The pressure of hot pressing is set to 220kg / cm 2 .

[0105] As shown in Table 2, the ratio of raw materials is set as ZnO powder: 72.0 mol%, MgO powder: 24.6 mol%, Al 2 o 3 Powder: 1.2 mol%, SiO 2 Powder: 2.2 mol%, the total is 100 mol%, and it is made into a basic raw material. Then, further fit B into it 2 o 3 Powder: 0.5% by weight, made into sintered raw material.

[0106] B 2 o 3 The proportioning of powder is l...

Embodiment 3

[0109] Prepare ZnO powder equivalent to 4N of 5 μm or less, MgO powder equivalent to 4N with an average particle diameter of 5 μm or less, and Al equivalent to 4N with an average particle diameter of 5 μm or less. 2 o 3 Powder, SiO equivalent to 4N with an average particle size of 5 μm or less 2 Powder, B equivalent to 4N with an average particle size of 5 μm or less 2 o 3 pink.

[0110] Next, these powders were prepared into the compounding ratio shown in Table 2, and after mixing, hot pressing (HP) was performed at the temperature of 1050 degreeC. The pressure of hot pressing is set to 220kg / cm 2 .

[0111] As shown in Table 2, the ratio of raw materials is set as ZnO powder: 89.3 mol%, MgO powder: 9.2 mol%, Al 2 o 3 Powder: 0.7 mol%, SiO 2 Powder: 0.8 mol%, the total is 100 mol%, and it is made into a basic raw material. Then, further fit B into it 2 o 3 Powder: 1.0% by weight, made into sintered raw material. B 2 o 3 The proportioning of powder is identical w...

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Abstract

A sputtering target characterized in that the content of Al is 0.2 to 3.0 mol% in terms of Al2O3, the content of Mg and / or Si is 1 to 27 mol% in terms of MgO and / or SiO2, and the rest is composed of Zn In addition to the basic composition consisting of a content in terms of ZnO, a metal that forms a low-melting oxide having a melting point of 1000° C. or lower is contained in an amount of 0.1 to 20% by weight in terms of oxide weight. The present invention provides a target for forming an optical thin film that does not contain sulfur, has low volume resistance, is capable of DC sputtering, and has a low refractive index, and a manufacturing method thereof. Since the target itself has a high density, there is little abnormal discharge, and stable sputtering can be performed. Furthermore, since the film obtained by sputtering has a high transmittance and is composed of a non-sulfide system, it is useful for forming a film for an optical information recording medium in which the adjacent reflective layer and recording layer are less prone to degradation. By improving the characteristics of the optical information recording medium, reducing the cost of equipment, and increasing the film forming speed, the yield can be greatly improved.

Description

technical field [0001] The present invention relates to a target for forming an optical thin film that does not contain sulfur, has low volume resistance, is capable of DC sputtering, and has a low refractive index, and a manufacturing method thereof. Background technique [0002] In the past, ZnS-SiO, which was widely used mainly in the protective layer of phase-change optical information recording media, 2 It has excellent properties in terms of optical properties, thermal properties, and adhesion to the recording layer, and is widely used. However, the current rewritable optical disc represented by Blu-ray is further strongly required to increase the number of rewritable times, to increase the capacity, and to achieve high-speed recording. [0003] As one of the causes of degradation of the rewritable number of optical information recording media, etc., can be cited from ZnS-SiO 2 The sulfur composition is directed by the protective layer ZnS-SiO 2 Diffusion in recordi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C14/34C04B35/453G11B7/24G11B7/254G11B7/257
CPCC04B35/453C23C14/08C23C14/3414C04B35/645C04B2235/3201C04B2235/3206C04B2235/3217C04B2235/3237C04B2235/3239C04B2235/3256C04B2235/3294C04B2235/3296C04B2235/3298C04B2235/34C04B2235/3409C04B2235/3418C04B2235/447C04B2235/5436C04B2235/77C04B2235/3284
Inventor 奈良淳史佐藤和幸
Owner JX NIPPON MINING & METALS CORP
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