A kind of impurity segregation and condensation Schottky source-drain device and its preparation method

Abstract

An impurity segregation and Schottky source drain component comprises an annular semiconductor channel in the perpendicular direction, an annular gate electrode, an annular gate medium layer, a source area, an impurity segregation area, a drain area, an impurity segregation area and a semiconductor substrate. The source area is located at the bottom of the channel in the perpendicular direction and connected with the substrate. The impurity segregation area is located between the source area and the channel in the perpendicular direction. The drain area is located at the top of the channel in the perpendicular direction. The impurity segregation area is located between the drain area and the channel in the perpendicular direction. The gate medium layer and the gate electrode surround the channel in the perpendicular direction in an annular mode. The source area and the drain area respectively make contact with Schottky which are the same as the channel in barrier height. The source end and drain end impurity segregation areas are highly doped areas with the same kind of impurities. According to the structure, the Schottky barrier source drain structure is used for lowering the thermal budget, decreasing leak currents and simplifying technology requirements, impurity segregation is used for thinning barriers and increasing driving currents, and the channel in the perpendicular direction and the annular gate structure are used for breaking through the photo-etching limitation in the integration machining process and increasing the integration level.

Description

Technical field [0001] The invention belongs to the field of field-effect transistor logic devices and circuits in CMOS ultra-large integrated circuits (ULSI), and specifically relates to a ring-gate MOS transistor combining vertical channel, impurity segregation and Schottky barrier source / drain structure and the same Preparation. Background technique [0002] Driven by Moore's Law, the feature size of traditional MOSFETs has been shrinking, and now it has entered the nanometer scale. Following this, the negative effects such as the short-channel effect of the device have become more and more serious. The effects of reduced leakage barrier and band-band tunneling make the off-state leakage current of the device continuously increase. In the research on new device structures, the source-drain doped gate all around transistor (GAA) structure is currently the most concerned one. GAA devices have better gate control characteristics, which can meet the sharpest characteristic requi...

AI Technical Summary

Problems solved by technology

In addition, the introduction of nanowires makes the source and drain design of GAA more complex than planar devices and multi-gate devices

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