Semipolar surface gallium nitride based light emitting diode and preparation method thereof

Abstract

The invention provides a semi-polar planar GaN-based light emitting diode and its preparation method. The light emitting diode comprises a substrate, an aluminium nitride buffer layer, an undoped semi-polar planar GaN layer, a semi-polar planar GaN N-type layer, a semi-polar planar N-type InGaN insert layer, a semi-polar planar GaN / InGaN multiple quantum well active luminescent layer, a semi-polar planar P-type AlGaN electronic barrier layer, and a semi-polar planar P-type GaN layer. The surface of the substrate has raised graphs which are periodically arranged; the aluminium nitride buffer layer is deposited in interval areas among the raised graphs; the undoped semi-polar planar GaN layer is manufactured on the aluminium nitride buffer layer; there are gas areas between the undoped semi-polar planar GaN layer and the raised graphs on the surface of the substrate, thus blocking dislocation defects from extending upwards; the semi-polar planar GaN N-type layer is manufactured on the undoped semi-polar planar GaN layer; the semi-polar planar N-type InGaN insert layer is manufactured on the semi-polar planar GaN N-type layer; the semi-polar planar GaN / InGaN multiple quantum well active luminescent layer is manufactured on the semi-polar planar N-type InGaN insert layer; the semi-polar planar P-type AlGaN electronic barrier layer is manufactured on the semi-polar planar GaN / InGaN multiple quantum well active luminescent layer; and the semi-polar planar P-type GaN layer is manufactured on the semi-polar planar P-type AlGaN electronic barrier layer.

Description

technical field [0001] The invention belongs to the technical field of semiconductors and relates to light-emitting diodes, in particular to a semi-polar (11-22) surface gallium nitride-based light-emitting diode (LED) structure based on an m-plane sapphire pattern substrate and a preparation method thereof. The combination of pattern substrate growth technology and indium gallium nitrogen insertion layer technology can significantly improve the crystal quality and surface morphology of light-emitting diode materials, and improve the light extraction efficiency of semi-polar surface gallium nitride-based light-emitting diodes. Background technique [0002] As a typical application of the third-generation wide-bandgap semiconductor technology, commercial gallium nitride (GaN)-based LED products have covered the ultraviolet to green light spectrum. As a light-emitting device, GaN-based LEDs can be widely used in many aspects such as indoor and outdoor lighting, commercial ligh...

AI Technical Summary

Problems solved by technology

The high-density dislocations and stacking faults in the semipolar GaN epitaxial layer originate from the film-substrate interface. In epitaxy, the method of adjusting the growth mode through substrate nitridation combined with buffer layer optimization can certainly improve GaN epitaxy to a certain extent. The crystal quality of the layer, but the room for improvement is limited; at the same time, the light extraction efficiency of semi-polar surface LEDs using flat substrates is low

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