Organic light-emitting diode and preparation method thereof
An electroluminescence device and electroluminescence technology, which are applied in the direction of electric solid state devices, semiconductor/solid state device manufacturing, electrical components, etc., to achieve the effect of improving flexibility
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Embodiment 1
[0053] A method for preparing an organic electroluminescent device, comprising the following steps:
[0054] (1) Pre-treatment of ITO glass substrate 1: put ITO conductive glass substrate 1 into acetone, ethanol, deionized water, and ethanol in sequence, ultrasonically clean them for 5 minutes, then blow dry with nitrogen, and dry them in an oven for later use; The cleaned ITO glass substrate 1 is subjected to surface activation treatment to increase the oxygen content of the conductive surface layer and improve the work function of the conductive layer surface; the thickness of the ITO glass substrate 1 is 100nm;
[0055] (2) Preparation of luminescent functional layer 2:
[0056] Hole injection layer 21: MoO is evaporated on the ITO glass substrate 1 3 Hybrid material obtained by doping NPB, MoO 3 The doping mass fraction is 30%, and the evaporation is carried out by high-vacuum coating equipment, and the vacuum degree during evaporation is 1×10 -5 Pa, the evaporation rat...
Embodiment 2
[0073] A method for preparing an organic electroluminescent device, comprising the following steps:
[0074] (1), (2), (3) are the same as embodiment 1;
[0075] (4) Preparation of encapsulation layer:
[0076] (a) Preparation of the first organic barrier layer: TAPC was vacuum-evaporated on the cathode layer to obtain a first organic barrier layer with a thickness of 200 nm and a vacuum degree of 1×10 -5 Pa, the evaporation rate is
[0077] (b) Preparation of the second organic barrier layer: Bphen was vacuum evaporated on the first organic barrier layer to obtain a second organic barrier layer with a thickness of 200 nm and a vacuum degree of 1×10 -5 Pa, the evaporation rate is
[0078] (c) Preparation of the first inorganic barrier layer: the first inorganic barrier layer was prepared by vacuum evaporation on the second organic barrier layer, and the material was MoO 3 A hybrid material formed with LiF to obtain a first inorganic barrier layer with a thickness of 200n...
Embodiment 3
[0086] A method for preparing an organic electroluminescent device, comprising the following steps:
[0087] (1), (2), (3) are the same as embodiment 1;
[0088] (4) Preparation of encapsulation layer:
[0089] (a) Preparation of the first organic barrier layer: NPB was vacuum-evaporated on the cathode layer to obtain a first organic barrier layer with a thickness of 300 nm, and the vacuum degree was 1×10 -4 Pa, the evaporation rate is
[0090] (b) Preparation of the second organic barrier layer: BCP was vacuum evaporated on the first organic barrier layer to obtain a second organic barrier layer with a thickness of 300 nm, and the vacuum degree was 1×10 -4 Pa, the evaporation rate is
[0091] (c) Preparation of the first inorganic barrier layer: the first inorganic barrier layer was prepared by vacuum evaporation on the second organic barrier layer, and the material of the first inorganic barrier layer was V 2 o 5 and CeF 3 Formed hybrid material with a thickness of...
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