Ferrite thin film-forming composition and method of forming ferrite thin film

A technology of ferrite film and composition, applied in the direction of liquid application, application of magnetic film to substrate, thermal decomposition application, etc., can solve the problems of deterioration of coating film formation, poor stability, and difficulty in further improving magnetic permeability, etc. Achieves the effect of improving storage stability, reducing iron loss of the film, and improving magnetic permeability

Inactive Publication Date: 2014-10-01
MITSUBISHI MATERIALS CORP
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In a film formed using this composition (mixed solution), there is a problem that it is difficult to further improve properties such as magnetic permeability
One of the reasons for this is considered to be that it is difficult to further improve, for example, the coatability and uniformity of film thickness when coating by a spin spray method, etc. due to the solvent used, etc. Density etc.
[0008] In addition, the composition shown in the above-mentioned Journal of Magnetism and Magnetic Materials, 309 (2007) p.75-79 (2.Experimenntal of p.75-76) has poor long-term storage stability and deteriorates over time. There is a tendency to cause liquid precipitation, and thus there is a problem that the coating film formation property is deteriorated

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ferrite thin film-forming composition and method of forming ferrite thin film
  • Ferrite thin film-forming composition and method of forming ferrite thin film
  • Ferrite thin film-forming composition and method of forming ferrite thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-1

[0051] First, nickel (II) nitrate hexahydrate, zinc (II) nitrate tetrahydrate, and iron (III) nitrate nonahydrate were prepared as metal materials, and the composition of the formed ferrite thin film was (Ni 0.64 Zn 0.36 O) 1.0 (Fe 2 o 3 ) 1.0 Weigh them separately. In addition, N-methylpyrrolidone was prepared as a solvent in an amount corresponding to 30% by mass of the adjusted composition relative to 100% by mass, and propylene glycol was prepared as another solvent in an amount corresponding to 10% by mass, and these were added to the above-mentioned metal material and The mixture was mixed and stirred at a temperature of 30° C. for 6 hours using an oil bath.

[0052] After stirring, 37.2% by mass of butanol was further added as another solvent relative to 100% by mass of the adjusted composition, and adjusted so that the total of the above-mentioned metal materials occupied in the composition was calculated in terms of metal oxides up to 5% by mass. Then, it stirr...

Embodiment 1-2

[0055]

[0056] Except that the ratio of N-methylpyrrolidone when the adjusted composition is set to 100% by mass is set to the ratio shown in the following table 1, a ferrite thin film is prepared in the same manner as in Example 1-1. The composition was used, and a NiZn ferrite film having the thickness shown in Table 1 was formed.

Embodiment 1-4～ Embodiment 1-9、 comparative example 1-3～ comparative example 1-6

[0058] Except that the ratio of each metal material is adjusted so that the composition of the formed ferrite thin film becomes the composition shown in the following table 1, ferrite is prepared in the same manner as in Example 1-1 or Example 1-2. The film-forming composition was used to form a NiZn ferrite film having the thickness shown in Table 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention provides a ferrite thin film-forming composition and method of forming ferrite thin film. This ferrite thin film-forming composition is a composition for forming a thin film of NiZn ferrite, CuZn ferrite, or NiCuZn ferrite using a sol-gel method, and the composition includes: metal raw materials; and a solvent containing N-methyl pyrrolidone, wherein a ratio of an amount of N-methyl pyrrolidone to 100 mass% of the total amount of the composition is in a range of 30 to 60 mass%.

Description

technical field [0001] The present invention relates to a composition for forming a ferrite thin film for forming a magnetic film or the like of a thin-film inductor incorporated in an IPD (Integrated Passive Device) chip by a sol-gel method, and the use of the composition The formation method of the ferrite thin film. [0002] This application claims priority to Japanese Patent Application No. 2013-061609 for which it applied on March 25, 2013, and uses the content here. Background technique [0003] In recent years, with increasing demands for miniaturization and weight reduction of various electronic devices, miniaturization and thinning of capacitors and inductors, etc., of IPD chips mounted on substrates with many passive devices are also required. To reduce the thickness of inductors, a thin-film type inductor with a spiral-shaped planar coil sandwiched between magnetic materials such as ferrite has been proposed, for example, from a wire-wound inductor of a conventio...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01F10/20H01F41/24
CPCH01F41/24C23C18/1254C23C18/1241C09D5/00C23C18/1216C23C18/1245H01F41/22H01F10/20H01F1/01
Inventor 土井利浩樱井英章曽山信幸中村贤蔵五十岚和则
Owner MITSUBISHI MATERIALS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap