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Nano-diamond film with Si-V luminescence and preparation method thereof

A nano-diamond and thin-film technology, which is applied in the direction of nanotechnology, nanotechnology, nanotechnology, etc. for materials and surface science, can solve problems that have not been reported, and achieve the effect of easy operation and simple method

Active Publication Date: 2014-09-24
ZHEJIANG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, the oxidation treatment of thin films is mainly studied in the literature, and the influence of oxidation on the microstructure and mechanical properties of thin films is mainly studied; however, the effect of oxidation treatment on the Si-V luminescent properties of thin films has not been reported.

Method used

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  • Nano-diamond film with Si-V luminescence and preparation method thereof
  • Nano-diamond film with Si-V luminescence and preparation method thereof
  • Nano-diamond film with Si-V luminescence and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0028] Polish the monocrystalline silicon wafer with nano-scale diamond powder, and the grinding time is about half an hour. Polished silicon wafers are used as substrates for the growth of nano-diamond films after ultrasonic cleaning. The hot wire chemical vapor deposition method (chemical vapor deposition equipment was purchased from Shanghai Jiaoyou Diamond Coating Co., Ltd.) was used, acetone was used as the carbon source, and acetone was brought into the reaction chamber by hydrogen bubbling. The temperature of the reaction chamber was controlled at 600~ 700° C., the preparation time is 5 hours, and a nano-diamond film with a thickness of 3 μm is prepared. The surface morphology of the film was observed by field emission scanning electron microscopy, and the microstructure of the film was observed by high resolution transmission electron microscope (HRTEM); the luminescent properties of the film were tested by photoluminescence spectroscopy.

[0029] figure 1 It is a fi...

Embodiment 2

[0033]The monocrystalline silicon wafer is polished with nanometer diamond powder, and the polishing time is about half an hour. After the polished silicon wafer is cleaned by an ultrasonic machine, it is used as the substrate for the growth of the nano-diamond film. The hot wire chemical vapor deposition method (chemical vapor deposition equipment was purchased from Shanghai Jiaoyou Diamond Coating Co., Ltd.) was used, acetone was used as the carbon source, and acetone was brought into the reaction chamber by hydrogen bubbling. The temperature of the reaction chamber was controlled at 600~ 700° C., the preparation time is 6 hours, and a nano-diamond film with a thickness of 3.5 μm is prepared. The results of photoluminescence spectroscopy show that the thin film does not have Si-V luminescence peak, indicating that the prepared nano-diamond film does not have Si-V luminescence properties.

[0034] The above-mentioned nano-diamond film was incubated in the air at 600°C for 30...

Embodiment 3

[0037] The monocrystalline silicon wafer is polished with nanometer diamond powder, and the polishing time is about half an hour. After the polished silicon wafer is cleaned by an ultrasonic machine, it is used as the substrate for the growth of the nano-diamond film. The hot wire chemical vapor deposition method (chemical vapor deposition equipment was purchased from Shanghai Jiaoyou Diamond Coating Co., Ltd.) was used, acetone was used as the carbon source, and acetone was brought into the reaction chamber by hydrogen bubbling. The temperature of the reaction chamber was controlled at 600~ 700° C., the preparation time is 5 hours, and a nano-diamond film with a thickness of 3 μm is prepared. The results of photoluminescence spectroscopy show that the thin film does not have Si-V luminescence peak, indicating that the prepared nano-diamond film does not have Si-V luminescence properties.

[0038] The above-mentioned nano-diamond film was incubated in the air at 700°C for 5 m...

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Abstract

The invention provides a nano-diamond film with Si-V luminescence and a preparation method thereof. The nano-diamond film is prepared on a single crystal silicon substrate by use of a hot filament chemical vapor deposition method; heat preservation is performed on the film for 5-150 minutes in air at a temperature ranging from 500 to 700 DEG C, and then the nano-diamond film with Si-V luminescence is obtained. The nano-diamond film prepared has relatively high Si-V luminescence intensity which has very important scientific significance and engineering value for the application of the nano-diamond film in the fields such as single photon sources, quantum information processing, photoelectric devices, biomarkers, semiconductor devices and field emission displays.

Description

(1) Technical field [0001] The invention relates to a nano-diamond thin film with Si-V luminescence (the luminescence peak in the photoluminescence spectrum is located at 738nm) and a preparation method thereof. (2) Background technology [0002] There are more than 500 luminescent centers in diamond, among which there are three most typical luminescent centers: nitrogen-vacancy (N-V), NE8 and silicon-vacancy (Si-V) centers, which have been confirmed as bright and stable room temperature single photon sources , has very important scientific significance and engineering value in the application of single photon sources, quantum information processing, optoelectronic devices, biomarkers, semiconductor devices and field emission displays. [0003] The luminescence peak of the Si-V luminescence center in diamond is located at 738nm in the photoluminescence spectrum (PL spectrum), the line width is narrow (~5nm), and the luminescence lifetime is very short (1.2ns), making Si-V a ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/27C23C16/56C09K11/59B82Y40/00B82Y30/00
Inventor 胡晓君梅盈爽
Owner ZHEJIANG UNIV OF TECH
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