Manufacturing method of semiconductor device and adhesive film used in the manufacturing method of semiconductor device

A manufacturing method and adhesive film technology, applied in semiconductor/solid-state device manufacturing, adhesives, film/sheet-like adhesives, etc., can solve problems such as inability to peel off die-bonding sheets, inability to properly cut off chip-bonding sheets, etc., and achieve Effect of suppressing adhesion to the chip surface and reducing the amount of debris

Active Publication Date: 2016-11-30
NITTO DENKO CORP
View PDF13 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a result, the chips at the time of cutting the die-bonding sheet are fused with the die-bonding sheet, and the die-bonding sheet cannot be cut properly.
Especially when the chip is thin or the die-bonding sheet is thick, there is a high possibility that the die-bonding sheet cannot be properly cut.
Therefore, there is a problem that the die-bonding sheet cannot be peeled off from the dicing tape in the subsequent pick-up process.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Manufacturing method of semiconductor device and adhesive film used in the manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device and adhesive film used in the manufacturing method of semiconductor device
  • Manufacturing method of semiconductor device and adhesive film used in the manufacturing method of semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0155] The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23.6% by weight.

[0156] (a) 100 parts of acrylate-based polymer mainly composed of ethyl acrylate-methyl methacrylate (manufactured by Negami Industry Co., Ltd., Parachrom W-197CM)

[0157] (b) Epoxy resin (made by JER Co., Ltd., Epicoat 1004) 32 parts

[0158] (c) 34 parts of phenolic resin (Milex XLC-4L manufactured by Mitsui Chemicals Co., Ltd.)

[0159] (d) 90 parts of spherical silica (manufactured by Admatex Co., Ltd., SO-25R)

[0160] This adhesive composition solution was coated on a release-treated film (release liner) composed of a polyethylene terephthalate film having a thickness of 50 μm after a silicone release treatment, and then heated at 130° C. Let dry for 2 minutes. Thus, an adhesive film A having a thickness of 25 μm in Example 1 was obtained.

Embodiment 2

[0162] The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23.6% by weight.

[0163] (a) 100 parts of acrylate-based polymer mainly composed of ethyl acrylate-methyl methacrylate (manufactured by Negami Industry Co., Ltd., Parachrom W-197CM)

[0164] (b) Epoxy resin (made by JER Co., Ltd., Epicoat 1004) 12 parts

[0165] (c) 13 parts of phenolic resin (Milex XLC-4L manufactured by Mitsui Chemicals Co., Ltd.)

[0166] (d) 188 parts of spherical silica (manufactured by Admatex Co., Ltd., SO-25R)

[0167] This adhesive composition solution was coated on a release-treated film (release liner) composed of a polyethylene terephthalate film having a thickness of 50 μm after a silicone release treatment, and then heated at 130° C. Let dry for 2 minutes. Thus, the adhesive film B of Example 2 having a thickness of 25 μm was obtained.

Embodiment 3

[0169] The following (a) to (d) were dissolved in methyl ethyl ketone to obtain an adhesive composition solution having a concentration of 23.6% by weight.

[0170] (a) 100 parts of acrylate-based polymer mainly composed of ethyl acrylate-methyl methacrylate (manufactured by Negami Industry Co., Ltd., Parachrom W-197CM)

[0171] (b) Epoxy resin (made by JER Co., Ltd., Epicoat 1004) 21 parts

[0172] (c) 22 parts of phenolic resin (Milex XLC-4L manufactured by Mitsui Chemicals Co., Ltd.)

[0173] (d) 77 parts of spherical silica (manufactured by Admatex Co., Ltd., SO-25R)

[0174] This adhesive composition solution was coated on a release-treated film (release liner) composed of a polyethylene terephthalate film having a thickness of 50 μm after a silicone release treatment, and then heated at 130° C. Let dry for 2 minutes. Thus, an adhesive film C having a thickness of 25 μm in Example 3 was obtained.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
thicknessaaaaaaaaaa
lengthaaaaaaaaaa
Login to view more

Abstract

An object of the present invention is to provide a method of manufacturing a semiconductor device capable of improving cutting reliability of an adhesive film and suppressing chip contamination caused by the adhesive film. The present invention provides a method for manufacturing a semiconductor device, comprising the following steps: after forming a groove (4S) on the surface of a semiconductor wafer (4), pasting a protective adhesive film (44), performing back grinding of the semiconductor wafer, and The process of exposing the groove from the back surface; the process of attaching the adhesive film to the back surface of the semiconductor wafer and then peeling off the protective adhesive film; and the process of cutting the adhesive film by irradiating a laser with a wavelength of 355 nm along the groove where the adhesive film was exposed ; The absorption coefficient of (a) wavelength 355nm of the adhesive film is 40cm ‑1 The above, (b) the tensile storage modulus at 50°C is 0.5 MPa to 20 MPa, and (c) the tensile storage modulus at 120°C is 0.3 MPa to 7 MPa, or 120°C The melt viscosity under the condition is above 2000Pa·s.

Description

technical field [0001] The present invention relates to a method of manufacturing a semiconductor device and an adhesive film used in the method of manufacturing the semiconductor device. Background technique [0002] Conventionally, silver paste has been used when adhering semiconductor chips to lead frames or electrode members in the manufacturing process of semiconductor devices. The adhesion process is performed by applying a paste-like adhesive on a die pad of a lead frame, etc., mounting a semiconductor chip thereon, and curing the paste-like adhesive layer. [0003] However, the slurry adhesive has large variations in coating amount, coating shape, etc. due to its viscosity behavior, deterioration, and the like. As a result, the thickness of the formed paste-like adhesive is not uniform, and thus the reliability of the adhesion strength of the semiconductor chip is poor. That is, when the coating amount of the paste-like adhesive is insufficient, the adhesive streng...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/301C09J7/00C09J11/04C09J133/04C09J161/06C09J163/00H01L21/52
Inventor 田中俊平宍户雄一郎大西谦司浅井文辉
Owner NITTO DENKO CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap