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Method of manufacturing photoelectric conversion device

A photoelectric conversion device and manufacturing method technology, applied in photovoltaic power generation, final product manufacturing, sustainable manufacturing/processing, etc., can solve the space limitation of the number of film-forming chambers, the complex and expensive mechanism of substrate movement, and the mechanical structure of the intermediate chamber Complicated and other issues, to achieve good photoelectric conversion characteristics and low cost effects

Inactive Publication Date: 2014-08-13
SHARP KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this multi-chamber production device, there are many lines for the substrate passing through the intermediate chamber, which inevitably leads to a complicated mechanical structure of the intermediate chamber.
For example, the mechanism for moving the substrate while maintaining the airtightness between the intermediate chamber and each film-forming chamber is complicated and expensive, and there is also a problem that the number of film-forming chambers arranged around the intermediate chamber is limited in space.

Method used

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  • Method of manufacturing photoelectric conversion device
  • Method of manufacturing photoelectric conversion device
  • Method of manufacturing photoelectric conversion device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 approach

[0051]

[0052] image 3 is a cross-sectional view schematically showing the structure of a photoelectric conversion device manufactured by the manufacturing method of this embodiment. image 3 The photoelectric conversion device 100 shown has a first photoelectric converter 10 , a second photoelectric converter 20 , a conductive film 3 and a metal electrode 4 on a transparent conductive film 2 formed on a substrate 1 . The first photoelectric converter 10 is an amorphous pin structure laminate formed by sequentially laminating the first p-type semiconductor layer 11, the i-type amorphous silicon-based photoelectric conversion layer 12, and the first n-type semiconductor layer 13. The converter 20 is a microcrystalline pin structure laminate in which a second p-type semiconductor layer 21 , an i-type microcrystalline silicon-based photoelectric conversion layer 22 , and a second n-type semiconductor layer 23 are sequentially laminated. In the present specification, "microcr...

Embodiment 1a

[0067] In the manufacturing method of this embodiment, the power density of the unit electrode in the first plasma treatment step (S10) is set to 0.068 W / cm 2 , the power density of the unit electrode in the second plasma treatment process (S40) is set to 0.225W / cm 2 , thus fabricating a photoelectric conversion device.

[0068] Figure 4 It is a graph showing the change of the control temperature and the actual processing temperature from the 1st plasma processing process (S10) to the 2nd plasma processing process (S40) in this Example. exist Figure 4 In , the horizontal axis represents time, and the vertical axis represents temperature. exist Figure 4 In , the dotted line represents the control temperature, and the solid line represents the actual treatment temperature. The process temperature, ie the temperature of the anode, was measured by thermocouples.

[0069] like Figure 4 As shown, in the first plasma processing step (S10), the control temperature is set to...

Embodiment 1b

[0072] In the manufacturing method of this embodiment, the power density of the unit electrode in the first plasma treatment step (S10) is set to 0.068 W / cm 2 , the power density of the unit electrode in the second plasma treatment process (S40) is set to 0.300W / cm 2 , thus fabricating a photoelectric conversion device.

[0073] Figure 5 It is a graph showing the change of the control temperature and processing temperature from the 1st plasma processing process (S10) to the 2nd plasma processing process (S40) in this Example. exist Figure 5 In , the dotted line represents the control temperature, and the solid line represents the actual treatment temperature. The process temperature, ie the temperature of the anode, was measured by thermocouples.

[0074] like Figure 5 As shown, in the second plasma processing step (S40), the power density is relatively high, and the substrate is easy to be heated by high-frequency discharge, and the processing temperature continues to...

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Abstract

The present invention provides a method of manufacturing a photoelectric conversion device for forming a semiconductor layer on a substrate by the plasma CVD method. The method includes a first plasma processing step in which a processing temperature reaches a first temperature; a second plasma processing step in which the processing temperature reaches a second temperature; a temperature regulating step of lowering the processing temperature to a third temperature lower than the first temperature and the second temperature after the first plasma processing step and before the second plasma processing step; and a temperature raising step of raising the processing temperature from the third temperature to the second temperature. The first plasma processing step, the temperature regulating step, the temperature raising step, and the second plasma processing step are carried out within the same reaction chamber.

Description

technical field [0001] The present invention relates to a method of manufacturing a photoelectric conversion device in which a plurality of photoelectric converters are laminated. Background technique [0002] In recent years, attention has been drawn to thin-film photoelectric conversion elements formed by plasma CVD using gas as a raw material. Examples of such thin-film photoelectric conversion elements include silicon-based thin-film photoelectric conversion elements made of silicon-based thin films and CIS (CuInSe 2 ) compounds, CIGS (Cu(In, Ga)Se 2 ) compounds formed of thin-film photoelectric conversion elements, etc., and is promoting development and expanding production volume. The biggest feature of these photoelectric conversion elements is that after laminating a semiconductor layer or a metal electrode film on a large-area inexpensive substrate using a forming device such as a plasma CVD device or a sputtering device, they are formed on the same substrate by l...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/076H01L31/18H01L31/20
CPCH01L31/18H01L31/076H01L31/202Y02E10/545H01L22/26H01L31/1824Y02E10/548Y02P70/50
Inventor 本多真也奈须野善之山田隆西村和仁
Owner SHARP KK
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