Cleaning agent and method for producing silicon carbide single-crystal substrate

Abstract

The present invention provides a detergent for effectively cleaning, by a safe and simple method, a manganese component remaining on and adhered to a substrate surface, after polishing a silicon carbide single crystal substrate with a manganese compound-containing polishing agent. The present invention relates to a detergent for cleaning a silicon carbide single crystal substrate polished with a manganese compound-containing polishing agent, the detergent including at least one of ascorbic acid and erythorbic acid, in which the detergent has a pH of 6 or less.

Description

technical field [0001] The present invention relates to a cleaning agent and a method for producing a silicon carbide single crystal substrate, and more specifically, to a cleaning agent for cleaning a silicon carbide single crystal substrate polished with an abrasive containing a manganese compound, and to a method for cleaning a silicon carbide single crystal substrate using the cleaning agent. A method of manufacturing a cleaned silicon carbide single crystal substrate after grinding. Background technique [0002] Compared with silicon semiconductors, silicon carbide (SiC) semiconductors have greater breakdown electric field, electron saturation drift velocity, and thermal conductivity. Power devices that work at high speeds at high temperatures. Among them, the development of high-efficiency switching elements used in power sources for driving engines of electric two-wheeled vehicles, electric vehicles, hybrid vehicles, etc. is attracting attention. In order to realize...

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Problems solved by technology

[0009] However, in the method of using the above-mentioned weakly acidic to weakly basic and low-concentration chemical solution on the silicon carbide single crystal substrate, which has lower chemical reactivity and higher chemical resistance than the silicon substrate, the cleaning effect is not sufficient. full

In particular, as described in Patent Document 2 and Patent Document 3, a silicon carbide single crystal substrate polished with an abrasive containing a manganese compound as a heavy metal in a high concentration is used at room temperature using weakly acidic to weakly alkaline In addition, in the simple cleaning method of hydrogen peroxide with a low concentration, the effect of removing metal contamination caused by the adhesion of manganese components is not sufficient

Therefore, there is a problem that the cleaned substrate cannot be used for device fabrication

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