TDI type cmos image sensor accumulator circuit hardened against single event effect

Abstract

The invention relates to the design field of radiation hardened integrated circuits and CMOS image sensors in microelectronics, and provides a working mode of a TDI-type CMOS image sensor, wherein the working mode of the TDI-type CMOS image sensor is used for reinforcing the single event effect of pixels. According to the technical scheme, a TDI-type CMOS image sensor accumulation circuit for reinforcing the single event effect is provided, the accumulative series of the TDI-type CMOS image sensor is 3n, wherein n is equal to 1, 2, 3..., outputs of each line of pixels are stored in corresponding storages after digital-to-analogue conversion is conducted on the outputs, after the 3nth line of pixels is read out, output values of the front n lines of pixels, output values of the middle n lines of pixels and output values of the rear n lines of pixels are accumulated respectively, then three values are accumulated to obtain a sum value, the sum values are sent into a three-mode redundant module to be voted, abnormal values are removed, and the values are accumulated and output; a threshold value used by three-mode redundancy can be set by a user himself / herself. The TDI-type CMOS image sensor accumulation circuit for reinforcing the single event effect is mainly applied to design and manufacturing of integrated circuits.

Description

technical field [0001] The present invention relates to the design field of anti-radiation integrated circuit and CMOS image sensor in microelectronics, especially relates to the anti-radiation reinforcement of TDI image sensor by using circuit design method [0002] technical background [0003] The Time-Delay-Integration (TDI) CMOS image sensor uses a linear array or an area array photosensitive array, which moves at a fixed relative speed relative to the object to be photographed, and accumulates the output signals of the pixels of the same part of the object to be photographed. to get the image. figure 1 Shown is the accumulation timing for a 3-stage accumulation, figure 1 The label in represents the row number of each pixel row. In terms of time, each pixel row performs exposure and readout cyclically; TL represents the transit time of the TDI CMOS image sensor, and its value is equal to the center distance between two adjacent rows of pixels divided by The speed at wh...

AI Technical Summary

Problems solved by technology

When the TDI type CMOS image sensor is applied in a space environment, the pixel array is also susceptible to the single event effect, but the time-domain redundancy of the TDI accumulation mode itself makes it difficult to shield the interference of a single pixel in the time domain. possible

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