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A multi-physical domain collaborative design method for three-dimensional integrated circuits based on through-silicon vias

An integrated circuit and collaborative design technology, which is applied in the direction of electrical digital data processing, calculation, and special data processing applications, can solve the problems of not considering the influence of reliability, spending a lot of money, and increasing the cost of three-dimensional integrated circuit design, so as to improve Design efficiency, reduce design complexity, and reduce design cost

Active Publication Date: 2016-11-30
珠海天成先进半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Since the developed design software is very different and has a certain degree of pertinence, the design process established with it is not the same and does not have universality.
Moreover, the development of dedicated three-dimensional circuit design software will cost a lot of money, which will dramatically increase the cost of three-dimensional integrated circuit design
[0005] Second, the three-dimensional integrated circuit design process based on planar integrated circuit design methodology cannot complete the collaborative design of electrical, mechanical and thermal multi-physics domains
But the disadvantage is that due to the design of planar integrated circuits, the overall design process does not introduce thermal and force design, and does not consider the influence of coupling between thermal, force, and electrical multi-physics domains on the reliability of three-dimensional integrated circuits, and lacks multi-physics field coordination. design, so the three-dimensional integrated circuit designed through this process may not meet the design requirements in terms of thermal and mechanical reliability

Method used

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  • A multi-physical domain collaborative design method for three-dimensional integrated circuits based on through-silicon vias
  • A multi-physical domain collaborative design method for three-dimensional integrated circuits based on through-silicon vias
  • A multi-physical domain collaborative design method for three-dimensional integrated circuits based on through-silicon vias

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Effect test

Embodiment 1

[0082] According to the design method proposed by the present invention, the three-dimensionally integrated 4M SRAM memory design steps are as follows:

[0083] 1) Three-dimensional integrated 4M SRAM memory system functional module division

[0084] The 4M SRAM memory system can be divided into four independent 1M SRAM memory sub-modules according to functions, and one 1M SRAM memory is arranged on a chip layer, a total of 4 layers.

[0085] 2) Schematic design of three-dimensional integrated 4M SRAM memory

[0086] Use Altium Designer software to draw four 1M SRAM memory two-dimensional circuit schematic diagrams. At this time, the TSV delay characteristics are not introduced into the interconnection relationship of each 1M SRAM in the schematic diagram.

[0087] Three-dimensional integrated 4M SRAM memory function simulation verification: Input the RTL code of the above schematic diagram into ModelSim or Incisive software, and verify whether all functions are correct throu...

Embodiment 2

[0104] According to the design method proposed by the present invention, the design steps of a certain three-dimensional integrated electronic system are as follows:

[0105] 1) Division of functional modules of the three-dimensional integrated electronic system

[0106] The three-dimensional integrated electronic system can be divided into SoC modules, various peripheral storage modules and bus modules according to functions. Specifically, there are 5 sub-modules including SoC, CAN bus, SRAM, FLASH, and FPGA.

[0107] 2) Schematic design of three-dimensional integrated electronic system

[0108] Use Altium Designer software to draw a two-dimensional circuit schematic diagram of the electronic system composed of the above five sub-modules. At this time, the interconnection relationship between the five sub-modules in the schematic diagram does not introduce the delay characteristic of through-silicon vias.

[0109] Input the RTL code of the above schematic diagram into Model...

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Abstract

The invention discloses a multi-physical domain collaborative design method of a three-dimensional integrated circuit based on through-silicon vias, which considers the influence of coupling between thermal, mechanical and electrical multi-physical domains on the reliability of a three-dimensional integrated circuit, and adds thermal and mechanical design steps, A collaborative design method for thermal, mechanical and electrical multi-physics domains is established. In this collaborative design method, thermal, mechanical, and electrical design steps are iterated with each other until all three design requirements are met, thereby ensuring the high reliability design requirements of the three-dimensional integrated circuit. It overcomes the defect of lack of heat and force design steps in the current three-dimensional integrated circuit design process.

Description

technical field [0001] The invention belongs to the technical field of three-dimensional integrated circuits, and relates to a multi-physical domain collaborative design method for three-dimensional integrated circuits based on silicon vias. Background technique [0002] The three-dimensional integration technology based on Through-Silicon Via (TSV) allows information to be transmitted vertically between stacked chips through Silicon Via, which can greatly shorten the global interconnection length of the chip, relieve wiring channel congestion, and promote the leapfrog development of integrated circuits. One of the most effective ways of development. Although the three-dimensional integration technology has great advantages, due to the introduction of vertical interconnection in the electronic system, the design complexity of the three-dimensional integrated circuit is increased. biggest obstacle to development. [0003] At present, there are two main problems faced by the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G06F17/50
Inventor 单光宝刘松谢成民孙有民
Owner 珠海天成先进半导体科技有限公司
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