Organic electroluminescence apparatus and preparation method thereof
An electroluminescence device and luminescence technology, which are applied in the direction of organic semiconductor devices, circuits, electrical components, etc., can solve problems such as low luminous efficiency, poor performance of light-emitting devices, and reduced electron injection capabilities
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Embodiment 1
[0078] A method for preparing an organic electroluminescent device, comprising the steps of:
[0079] Place the glass substrate in deionized water containing detergent for ultrasonic cleaning. After cleaning, use isopropanol and acetone in ultrasonic treatment for 20 minutes, and then blow dry with nitrogen;
[0080] Through thermal evaporation process, in a vacuum of 1.0×10 -4 Under the conditions of Pa and speed of 0.02nm / s, Cu, CuPc, NPB, and DCJTB were sequentially evaporated and doped to Alq according to the doping mass fraction of 8%. 3 The mixed material and BAlq formed in the preparation method respectively prepare the anode, the hole injection layer, the hole transport layer, the light emitting layer and the hole blocking layer;
[0081] Then through the thermal evaporation process, in a vacuum of 1.0×10 -4 Sequential evaporation of Li under the conditions of Pa and speed 0.02nm / s 2 CO 3 According to the doping mass fraction of 10% doped into TPBi to form a mixed ...
Embodiment 2
[0086] A method for preparing an organic electroluminescent device, comprising the steps of:
[0087] Place the glass substrate in deionized water containing detergent for ultrasonic cleaning. After cleaning, use isopropanol and acetone in ultrasonic treatment for 20 minutes, and then blow dry with nitrogen;
[0088] Through thermal evaporation process, in a vacuum of 1.0×10 -5 Under the conditions of Pa and speed of 0.5nm / s, Au, ZnPc, 2-TNATA, and C545T were sequentially evaporated and doped to Alq according to the doping mass fraction of 20%. 3The mixed material and Bphen formed in the preparation of anode, hole injection layer, hole transport layer, light-emitting layer and hole blocking layer respectively; -5 Sequential evaporation of Cs under the conditions of Pa and speed 0.5nm / s 2 CO 3 Mixed materials, NiO, ReO formed by doping into Bphen according to the doping mass fraction of 2% 3 Prepare the pn junction layer according to the mixed material formed by doping 2% d...
Embodiment 3
[0092] A method for preparing an organic electroluminescent device, comprising the steps of:
[0093] Place the glass substrate in deionized water containing detergent for ultrasonic cleaning. After cleaning, use isopropanol and acetone in ultrasonic treatment for 20 minutes, and then blow dry with nitrogen;
[0094] Through thermal evaporation process, in a vacuum of 1.0×10 -3 Under the conditions of Pa and speed 0.2nm / s, Pt was evaporated sequentially, F6-TNAP was doped into MeO-TPD according to the doping mass fraction of 5%, and TAPC and NPB were doped into MeO-TPD according to the doping mass fraction of 8%. The mixed material and TPBi formed in Ir(MDQ)2(acac) were used to prepare anode, hole injection layer, hole transport layer, light emitting layer and hole blocking layer respectively; -3 Under the conditions of Pa and speed 0.2nm / s, Rb is evaporated sequentially 2 CO 3 The mixed material formed by doping Bphen according to the doping mass fraction of 20%, TiO 2 、M...
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