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Preparation method of rare earth-doped silicon carbide composite polishing powder

A technology of compound polishing and rare earth doping, which is applied to polishing compositions containing abrasives and other directions, can solve the problem that stone polishing cannot achieve the polishing effect, etc., and achieve the effects of improved polishing friction hardness, simple preparation process and good polishing effect.

Inactive Publication Date: 2014-07-16
UNIV OF JINAN
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the polishing process of stone, it is necessary to add polishing powder. Now people are using aluminum oxide powder or other powders such as ferric oxide or chromium oxide, that is, using a single abrasive, that is, a single polishing powder for polishing, but This kind of single polishing powder can't achieve good polishing effect on stone.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] A kind of preparation method of rare earth-doped silicon carbide composite polishing powder, in reactor, add the cerium nitrate of 55g and be dissolved in water, then add the Al2O3 of 15g, the silicon carbide of 10g, add 2g dispersant agent, stir to be Add 18g of oxalic acid to the slurry, stir to dissolve, water is not included in the components, under normal pressure, stir, add heat at 85°C, and react for 15h, so that the cerium nitrate can form uniform cerium oxalate particles, stop heating, cool to room temperature, Separation of liquid and solid. After the solid is preliminarily dried, the temperature is raised to 190~195°C, dried for 3 hours, and roasted at 900°C for 4 hours. The cerium oxalate produces uniform cerium oxide. After cooling, it is pulverized by airflow to obtain rare earth. Doped silicon carbide composite polishing powder, the obtained rare earth doped silicon carbide composite polishing powder.

Embodiment 2

[0025] A kind of preparation method of rare earth-doped silicon carbide composite polishing powder, in reactor, add the cerium nitrate of 90g and be dissolved in water, then add the Al2O3 of 40g, the silicon carbide of 14g, add 6g dispersant agent, stir to be Add 50g of oxalic acid to the slurry, stir to dissolve, water is not included in the components, under normal pressure, stir, add heat at 80°C, and react for 12h, so that the cerium nitrate forms uniform cerium oxalate particles, stop heating, cool to room temperature, Separation of liquid and solid. After the solid is preliminarily dried, the temperature is raised to 190~195°C, dried for 4 hours, and roasted at 950°C for 3 hours. The cerium oxalate produces uniform cerium oxide. After cooling, it is pulverized by air flow to obtain the rare earth doped Miscellaneous silicon carbide composite polishing powder, the obtained rare earth doped silicon carbide composite polishing powder.

Embodiment 3

[0027] A kind of preparation method of rare earth-doped silicon carbide composite polishing powder, in reactor, add the cerium nitrate of 330g and dissolve in water, then add the aluminum oxide of 90g, the silicon carbide of 60g, add 12g dispersant agent, stir to be Add 110g of oxalic acid to the slurry, stir to dissolve, water is not included in the components, under normal pressure, stir, add heat at 90°C, and react for 18h, so that the cerium nitrate forms uniform cerium oxalate particles, stop heating, cool to room temperature, Separation of liquid and solid. After the solid is preliminarily dried, the temperature is raised to 190~195°C, dried for 2 hours, and roasted at 1000°C for 2 hours. The cerium oxalate produces uniform cerium oxide particles. After cooling, it is pulverized by airflow to obtain rare earth mixed Miscellaneous silicon carbide composite polishing powder, the obtained rare earth doped silicon carbide composite polishing powder.

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Abstract

The invention discloses a preparation method of rare earth-doped silicon carbide composite polishing powder. The method is characterized by comprising the steps of feeding 45-70% of cerous nitrate according to the mass percent concentration, and dissolving into water, then respectively feeding 8-20% of aluminium oxide, 5-15% of silicon carbide and 0.5-1% of dispersing agent, and stirring to obtain slurry; then feeding 14-25% of oxalic acid into the slurry, stirring and dissolving, wherein the sum of the content of all the components except water of the slurry is 100%; stirring under the normal pressure, heating up to 80-90 DEG C, and carrying out a reaction for 2-6h at the temperature of 800-1000 DEG C; cooling and crushing by airflow to obtain the rare earth-doped silicon carbide composite polishing powder. The preparation technology is simple, easy in control of conditions, low in production cost and easy in industrial production. When being used for stone polishing process, the polishing powder is good in powder polishing effect, high in glossiness, less scratch, high in flatness and less in power dosage.

Description

technical field [0001] The invention relates to the technical field of preparation of a polishing powder, in particular to a preparation process of a rare earth-doped silicon carbide composite polishing powder and its use in stone polishing. Background technique [0002] Natural gas stone is commonly used in two categories: marble and granite. It can be used to decorate public buildings and higher-level civil buildings. It is used for exterior wall veneer, hotel lobby or office lobby floor and channel laying. Using marble and granite as interior and exterior finishes has good decorative effects and durability, but the cost is high. But in recent years, with the improvement of living standards, people's aesthetic concept of their own living environment is also constantly updated, and marble and granite are also increasingly appearing in home decoration. Because marble generally contains impurities, and calcium carbonate is easily weathered and eroded by the action of carbo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02
Inventor 李慧芝许崇娟卢燕
Owner UNIV OF JINAN
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