Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A gas shower head for a plasma reactor

A technology of plasma reactor and gas shower head is applied in the field of plasma treatment, which can solve the problems of uneven temperature distribution, uneven plasma treatment effect, deformation of temperature distribution devices, etc.

Active Publication Date: 2017-11-17
ADVANCED MICRO FAB EQUIP INC CHINA
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, thicker gaskets not only ensure gas isolation, but also make the contact pressure between the upper and lower plates insufficient or there is a gap, and the gap between the upper and lower plates will cause a sharp deterioration in the thermal conductivity between the upper and lower plates , eventually leading to uneven temperature distribution on the entire gas shower head
Uneven temperature distribution of the gas shower head will cause device deformation, and uneven distribution of deposited polymer during plasma treatment, which will lead to uneven plasma treatment effect

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A gas shower head for a plasma reactor
  • A gas shower head for a plasma reactor

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0009] The following combination figure 1 with 2 , to describe the first embodiment of the present invention in detail.

[0010] Such as figure 1 As shown, the plasma reactor 100 of the present invention includes a base 22 on which the substrate 20 to be processed is fixed, and the gas shower head 11 is also used as an upper electrode opposite to the base 22 and fixed on the top of the reactor. The gas shower head 11 is connected to a gas source 110 through a gas pipeline. The base 22 includes a substrate holding device such as an electrostatic chuck 21 . An edge ring 10 surrounds the substrate 20 and the substrate holder 21 . At least one radio frequency power supply provides a radio frequency electric field to the lower electrode within the susceptor. The upper part of the gas shower head includes a gas distribution device, which divides the gas from the gas source into the first reaction gas and the second reaction gas, which are output to the rear end of the gas showe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a gas spray head used for a plasma reactor. The gas spray head comprises gas distribution plates of an upper layer and a lower layer; a plurality of gas holes with corresponding positions are arranged in the gas distribution plates; the gas holes are isolated into different regions for providing reaction gas for different regions of the plasma reactor; an isolation ring in the different separation regions separates the first gas hole group and the second gas hole group; the isolation ring comprises an isolation groove and an isolation washer located in the isolation groove; and the compression height of the isolation washer is no more than 5% after the gas distribution plate of the upper layer and the gas distribution plate of the lower layer are closely attached by a fastening device.

Description

technical field [0001] The invention relates to the field of plasma processing, in particular to a gas shower head structure for a plasma reactor. Background technique [0002] In the manufacturing process of semiconductor devices, such as etching, deposition, oxidation, sputtering, etc., substrates (semiconductor wafers, glass substrates, etc.) are usually treated with plasma. Generally, plasma processing apparatuses include capacitively coupled plasma reactors and inductively coupled plasma reactors as methods for generating plasma in high frequency discharge plasma processing apparatuses. The capacitively coupled reactor is usually configured with an upper electrode and a lower electrode, preferably these two electrodes are arranged in parallel. In addition, usually, a substrate to be processed is placed on the lower electrode, and a high-frequency power source for plasma generation is applied to the upper electrode or the lower electrode via an integrator. The external...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01J37/32H01L21/67
Inventor 徐朝阳倪图强黄智林李菁
Owner ADVANCED MICRO FAB EQUIP INC CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products