Etching agent composition, metal pattern forming method and array substrate manufacturing method

A technology of composition and etchant, which is applied in the direction of surface etching composition, chemical instrument and method, semiconductor/solid-state device manufacturing, etc., and can solve problems such as damage to the lower data line

Active Publication Date: 2014-07-02
DONGWOO FINE CHEM CO LTD
View PDF9 Cites 31 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the etchant composition has a problem in that although the composition etches the silver/silver/silver of the transparent electrode film assembly of the transparent e

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Etching agent composition, metal pattern forming method and array substrate manufacturing method
  • Etching agent composition, metal pattern forming method and array substrate manufacturing method
  • Etching agent composition, metal pattern forming method and array substrate manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 to Embodiment 5 and comparative example 1 to comparative example 4

[0051] An etchant composition having a weight of 10 kg was prepared by the composition ratio shown in Table 1 below.

[0052] [Table 1]

[0053]

[0054] (Unit: wt%)

[0055] Azoles: 5-ATZ (5-aminotetrazole)

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The present invention provides an etching agent composition, metal pattern forming method and array substrate manufacturing method. The etching composition is applied to the single layer film for silver (Ag) or silver alloy, or multilayer films of indium oxide films including the monolayer. The total weight of the etching composition based on the etchant composition comprises: nitric acid 6-8.0wt%; 8-12.0wt%, 8 -10.0wt% sulfuric acid; potassium peroxomonosulfate; organic acid 0.5 -3.0wt%; and balanced water.

Description

[0001] Cross References to Related Applications [0002] This application claims the benefit of Korean Patent Application No. 10-2012-0151915 filed on December 24, 2012, which is hereby incorporated by reference in its entirety. technical field [0003] The present application relates to an etchant composition for a single-layer film of silver (Ag) or silver alloy, or a multi-layer film consisting of the single-layer film and an indium oxide film; The present application also relates to a method for forming a metal pattern by using the etchant composition; and a method for manufacturing an array substrate for an organic light emitting diode by using the etchant composition. Background technique [0004] An organic light emitting diode includes two opposing electrodes and an organic multilayer thin film having semiconductor properties and disposed between the two opposing electrodes. The organic light-emitting diode uses an organic light-emitting phenomenon in which an organ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C23F1/30H01L21/77H01L21/28H01L27/32
CPCC23F1/30C23F1/02C09K13/06C23F1/44H10K71/60
Inventor 张尚勋沈庆辅李昔准
Owner DONGWOO FINE CHEM CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap