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Medium dielectric coefficient measuring probe with coaxial line structure under high-temperature condition and system

A high temperature state, dielectric coefficient technology, applied in the measurement device, measurement of electrical variables, measurement of resistance / reactance / impedance and other directions, can solve the problem of inability to use measurement, filling medium can not withstand high temperature and other issues, to achieve easy testing, preparation process The effect of simple, high measurement accuracy

Active Publication Date: 2014-06-25
SICHUAN UNIV
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  • Abstract
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Problems solved by technology

[0004] In recent years, microwave heating has been applied in ore pretreatment, forging, sintering, carbothermal reduction of metal oxide ores, etc. With the application of microwave in metallurgy and other related industries, the dielectric properties of materials at high temperatures have been affected Great concern, and the traditional coaxial line measurement structure cannot be used for measurement under high temperature conditions because most of its filling media cannot withstand high temperatures above 500 °C

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  • Medium dielectric coefficient measuring probe with coaxial line structure under high-temperature condition and system
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  • Medium dielectric coefficient measuring probe with coaxial line structure under high-temperature condition and system

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Embodiment

[0034] In this example, the structure of the measuring probe is as follows: figure 1 and figure 2 As shown, including the measurement section and the interface section. One end of the interface section is connected to the measurement section, and the other end is an N-type coaxial joint structure. The inner conductor 10 of the interface section and the outer conductor 13 are filled with a high-temperature-resistant and heat-insulating solid medium 14. The inner diameter of the outer conductor 32 of the measuring section is slightly smaller than the inner diameter of the outer conductor 13 of the interface section. The solid medium 14 falls off. Since the inner diameter D of the outer conductor of the interface section is not much different from the inner diameter d of the outer conductor of the measurement section, the microwave reflection caused by the boss is very low and does not affect the measurement of the dielectric constant of the medium. In this example, D-d=0.5mm...

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Abstract

The invention relates to the measuring technique for dielectric medium dielectric coefficients under microwave frequency, and discloses a medium dielectric coefficient measuring probe with a coaxial line structure under the high-temperature condition, wherein the measuring probe is used for measuring medium dielectric coefficients under the high-temperature condition. According to the technical scheme, the medium dielectric coefficient measuring probe with the coaxial line structure under the high-temperature condition comprises a measuring section and an interface section, wherein one end of the interface section is connected with the measuring section, the other end of the interface section is of a coaxial joint structure, media between an inner conductor and an outer conductor of the interface section are high-temperature resistant heat insulation solid media, the inside diameter of an outer conductor of the measuring section is slightly smaller than that of the outer conductor of the interface section so that the high-temperature resistant heat insulation solid media can be prevented from falling off and microwave reflection can also be reduced, the space between an inner conductor and the outer conductor of the measuring section is of a hollow structure, and the inner conductor and the outer conductor of the measuring section and the inner conductor and the outer conductor of the interface section are coaxial. The measuring probe is suitable for measurement of dielectric coefficients of matter under the high-temperature condition, and is high in measurement accuracy within a wide frequency band range.

Description

technical field [0001] The invention relates to the measurement technology of dielectric permittivity at microwave frequency, in particular to a measurement probe and a measurement system of dielectric permittivity at high temperature. Background technique [0002] The dielectric coefficient of matter has always been a fundamental and important issue in the study of the interaction between matter and microwaves. People know the dielectric properties of the material by measuring the dielectric coefficient of the material, thus, a variety of microwave measurement methods are used to measure the dielectric coefficient of the material. [0003] Among the measurement methods, the non-resonant method is relatively simple. Among the non-resonant methods, the transmission-reflection method based on the coaxial line has been widely used in broadband measurement, and the measurement of the dielectric coefficient of materials ranging from high loss to low loss has achieved high accura...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R27/26
Inventor 黄卡玛陈倩杨阳闫丽萍赵翔陈星刘长军杨晓庆郭庆功
Owner SICHUAN UNIV
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