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Polishing pad for chemical mechanical polishing and preparation method thereof

A technology of chemical machinery and polishing pad, which is applied in the direction of grinding/polishing equipment, manufacturing tools, metal processing equipment, etc., can solve the problems of complex process, low reliability, long production cycle, etc., achieve simple process method and prolong service life , The effect of low production cost

Active Publication Date: 2016-04-13
HUBEI DINGLONG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

For example, these adhesives typically require curing for 24 hours or more, these adhesives are susceptible to chemical attack from polishing fluids, chemical mechanical polishing pads that are stacked together tend to have delamination problems during polishing, and The process of connecting multi-layer materials with mixture is complicated, with high energy consumption, high cost, long production cycle and low reliability

Method used

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  • Polishing pad for chemical mechanical polishing and preparation method thereof
  • Polishing pad for chemical mechanical polishing and preparation method thereof
  • Polishing pad for chemical mechanical polishing and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Raw materials for polishing layer:

[0049] Component A: 50.2% of 4,4'-diphenylmethane diisocyanate, 49.8% of polytetramethylene ether glycol with a molecular weight of 800, react at 70°C for 2 hours, vacuum (-0.095MPa) defoaming, A prepolymer with an isocyanate content of 28.0% was obtained.

[0050] Component B: 20.4% of 2,2′-diamino-3,3′-dichloro-4,4′-divinyldiphenylmethane, 78.2% of polypropylene ether diol with a molecular weight of 1000, and 0.1% of organic zinc catalyst , 1.0% of polymer microspheres, 0.1% of hard foam silicone oil and 0.2% of 2,2'-azobisisobutyronitrile, after rapid mixing, a uniformly dispersed mixed solution was obtained.

[0051] Mix components A and B at a mass ratio of 2:1 for 15 seconds at a stirring speed of 5000rpm, cast into a mold that has already been prepared, and gel at a temperature of 20°C for 10 minutes to obtain Uncured finish.

[0052] Raw materials for the buffer layer:

[0053] Component C: 48.9% of 4,4′-diphenylmethane...

Embodiment 2

[0057] Raw materials for polishing layer:

[0058] Component A: 40.2% liquefied 4,4′-diphenylmethane diisocyanate, 59.8% polytetramethylene ether glycol with a molecular weight of 800, react at 70°C for 2 hours, and vacuum (-0.095MPa) defoaming , to obtain a prepolymer with an isocyanate content of 23.2%.

[0059] Component B: 19% of 2,2′-diamino-3,3′-dichloro-4,4′-divinyldiphenylmethane, 79.6% of polypropylene ether diol with a molecular weight of 1000, and 0.1% of organic zinc catalyst , 0.8% of polymer microspheres, 0.3% of hard foam silicone oil and 0.2% of 2,2'-azobisisobutyronitrile, after rapid mixing, a uniformly dispersed mixed solution was obtained.

[0060] Mix components A and B at a mass ratio of 2:1 for 25 seconds at a stirring speed of 5000rpm, cast into a mold that has been prepared, and gel at a temperature of 20°C for 15 minutes to obtain Uncured finish.

[0061] Raw materials for the buffer layer:

[0062] Component C: 40.5% of 4,4'-diphenylmethane dii...

Embodiment 3

[0066] Raw materials for polishing layer:

[0067] Component A: 34.9% of 4,4'-diphenylmethane diisocyanate, 65.1% of polytetramethylene ether glycol with a molecular weight of 800, react at 70°C for 2 hours, vacuum (-0.095MPa) defoaming, A prepolymer with an isocyanate content of 20.6% was obtained.

[0068] Component B: 2-chloro-5-(4-methyl-3,5-divinyltoluene)-1,3-diphenylamine 23.1%, polypropylene ether glycol with a molecular weight of 1000 75.7%, organic bismuth catalyst 0.1 %, 0.8% of polymer microspheres, 0.1% of hard foam silicone oil and 0.2% of benzoyl peroxide, after rapid mixing, a uniformly dispersed mixed solution is obtained.

[0069] Mix components A and B according to the mass ratio of 2:1 at a stirring speed of 5000rpm for 25 seconds, cast into the prepared mold, and gel at a temperature of 25°C for 4 minutes to obtain Uncured finish.

[0070] Raw materials for the buffer layer:

[0071] Component C: 45% liquefied 4,4'-diphenylmethane diisocyanate, 55% p...

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Abstract

The invention discloses a manufacturing method of a polishing pad through chemico-mechanical polishing. The problems that an existing polishing pad is complex in technology, prone to delamination, high in energy consumption and cost and long in production period are solved. According to the technical scheme, a polishing layer is firstly manufactured, a buffering layer is cast on the polishing layer, finally the polishing pad is obtained through curing, and the polishing layer and the buffering layer are manufactured in a continuous casting mode and are connected together through chemical bonds without an adhesive. The polishing layer and the buffering layer of the polishing pad are combined firmly, the problem that the interlayer adhesive is prone to chemical erosion of a polishing liquid is avoided, and the polishing pad has the advantages of being low in technological difficulty, low in production cost and long in service life.

Description

technical field [0001] The invention relates to a polishing pad and a preparation method thereof, in particular to a chemical mechanical polishing polishing pad and a preparation method thereof. Background technique [0002] In the manufacture of optical substrate materials, integrated circuits and other electronic devices, some chemical mechanical polishing (CMP) processes are usually involved. In a typical CMP process, the material to be polished is placed on a carrier device and contacts a polishing layer in a polishing pad. The polishing pad is fixed on the platen. The carriage device is used to provide a controlled pressure on the material being polished so that it is pressed against the polishing pad. The polishing pad and wafer are rotated relative to each other under an external driving force. At the same time, the polishing liquid (such as a polishing slurry containing abrasives or an active liquid without abrasives) flows onto the polishing pad and the gap betwe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24D18/00B24B37/24
Inventor 朱顺全张季平李云峰
Owner HUBEI DINGLONG CO LTD
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