Electrically erasable programmable read-only memory as well as forming method and erasure method thereof

Abstract

The invention discloses an electrically erasable programmable read-only memory as well as a forming method and an erasure method thereof. The electrically erasable programmable read-only memory comprises a semiconductor substrate, word lines, floating gate medium layers, floating gates, control gate medium layers, control gates, isolation oxidation layers and bit line doping regions, wherein a plurality of active regions are distributed along the first direction in the semiconductor substrate; the work lines are located in the active regions; the floating gate medium layers are respectively located on the active regions at two sides of the word lines; the floating gates are located on the floating gate medium layers; the control gate medium layers are located on the floating gates; the control gates are located on the control gate medium layers; the width of the floating gates is larger than the width of the active regions; the isolation oxidation layers are located among the word lines, the floating gates and the control gates; the bit line doping regions are respectively located in the active regions at one side, far away from the word lines, of the floating gates and the control gates. According to the electrically erasable programmable read-only memory, a bit line end erasure mode is adopted, the coupling coefficients of the floating gates to the control gates and the bit line doping regions are structurally improved, and the erasure performance is improved while the step-by-step erasure function is realized.

Description

technical field [0001] The invention relates to the field of memory, in particular to an electrically erasable programmable read-only memory and its forming method and erasing method. Background technique [0002] Read-only memory (Read Only Merory, ROM) is a permanent memory (Non-volatile Memory), and the stored information and data will not disappear due to power supply interruption. Erasable and programmable read-only memory (Erasable Programmable ROM, ERPOM) is to extend the application of read-only memory to erasing and rewriting data, but the erasing action requires the use of ultraviolet rays, so the production of EPROM higher cost. In addition, when the EPROM performs data erasure, all the data or data stored in the EPROM will be cleared, which requires reprogramming every time the data is modified, which is quite time-consuming. [0003] Another kind of erasable programmable read-only memory (Electrically Erasable Programmable ROM, EEPROM) that can modify data doe...

AI Technical Summary

Problems solved by technology

[0005] The performance of the existing erasable programmable read-only memory still needs to be improved

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