Niobium alloy target material and preparation method thereof

A niobium alloy and target material technology, which is applied in the target material field, can solve the problems of difficult control of thin film deposition thickness uniformity and low target material utilization rate, and achieve the effects of good surface quality, small internal grains and good lubrication effect

Active Publication Date: 2014-06-18
NINGXIA ORIENT TANTALUM IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Cuboid, cube and cylinder shaped targets are solid. During the sputtering process, circular permanent magnets establish a circular magnetic field on the surface of the target and form an etching area on the circular surface with equal distances between the axes. The disadvantage is that the thickness of the film deposition The uniformity is not easy to control, and the utilization rate of the target is low, only 20%~30%

Method used

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preparation example Construction

[0028] The embodiment of the present invention discloses a method for preparing a niobium alloy target, which includes the following steps:

[0029] a) Preheating the niobium alloy tube blank, and applying glass powder on the surface of the preheated niobium alloy tube blank;

[0030] b) hot-extruding the niobium alloy tube blank obtained in step a), pickling the hot-extruded niobium alloy tube blank, and heat-treating the pickled niobium alloy tube blank;

[0031] c) Boring and milling the inner hole of the niobium alloy tube blank obtained in step b) by using the first cutter to obtain a niobium alloy target; the cutter head of the first cutter is a double cutter head or a single cutter head, and the first cutter The length of the cutter bar is greater than 5000 mm, the double cutter heads are arranged in sequence along the axial direction at the working end of the cutter bar, and the blade inclination angle of the cutter heads is a negative value.

[0032] The niobium allo...

Embodiment 1

[0057] Step 1. A niobium-10-zirconium ingot with a diameter of Φ290 and a length of 550 mm obtained by melting in a horizontal furnace and smelting twice in an electron beam furnace, and an ingot with a chemical composition of ≥99.95%;

[0058] Step 2. Preheat the niobium-10-zirconium ingot described in step 1 to 200°C, apply glass powder, heat the ingot to 560°C, and keep it warm for 3 hours. 280×280×465mm;

[0059] Step 3, pickling the niobium 10 zirconium ingot obtained in step 2, the acid solution is HCl:HF:H 2 SO 4 =5:3:2 (volume ratio), pickling time is 10 minutes, remove surface impurities and glass powder, and the metal luster can be seen without specks by naked eyes;

[0060] Step 4, heat-treating the niobium-10-zirconium ingot obtained in step 3: the heat treatment temperature is 1350 degrees, and the holding time is 60 minutes;

[0061] Step 5. Heating the niobium 10 zirconium ingot obtained in step 4 to 500°C, holding it for 2.5 hours, upsetting to 260mm, forgin...

Embodiment 2

[0076] Step 1. An ingot of niobium 53 titanium 47 of Φ290mm and length of 550mm obtained by smelting twice in an electric arc furnace, and an ingot with a chemical composition of ≥99.95%;

[0077] Step 2. Preheat the niobium 53 titanium 47 ingot obtained in step 1 to 200°C, apply glass powder, heat the ingot to 450°C, and keep it warm for 3 hours. Upsetting the ingot axially to 280mm for niobium 53titanium 47 ingot and stretching to 285×285×Lmm;

[0078] Step 3, pickling the niobium 53 titanium 47 ingot obtained in step 2: HCl: HF: H 2 SO 4 =5:3:2 (volume ratio), pickling time is 10 minutes, remove surface impurities and glass powder, and the metal luster can be seen without specks by naked eyes;

[0079] Step 4, heat-treating the niobium 53titanium 47 ingot obtained in step 3: the heat treatment temperature is 1000°C, and the holding time is 60min;

[0080] Step 5. Heating the niobium 53 titanium 47 ingot obtained in step 4 to 500°C, upsetting to 280mm after heat preservat...

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Abstract

The invention provides a preparation method of a niobium alloy target material. The preparation method comprises the steps: firstly, carrying out hot extrusion of a niobium alloy tube blank, then carrying out inner hole processing of the niobium alloy tube blank after hot extrusion, and thus obtaining the niobium alloy target material. In the preparation process of the niobium alloy target material, firstly, the surface of the niobium alloy tube blank is coated with a glass powder; because the surface of the niobium alloy tube blank is spray-coated with the glass powder, the niobium alloy tube blank is allowed to have relatively good lubrication effect in the hot extrusion process, and thus the surface quality of the niobium alloy tube blank is relatively good; the subsequent hot extrusion processing and heat treatment are conducive to refinement and homogenization of crystal grains of the niobium alloy tube blank; and finally, the niobium alloy tube blank after hot extrusion is subjected to mechanical processing, and an inner hole of the niobium alloy tube blank is bored and milled by selected special tools, so that chip breaking can be allowed to be continuously discharged from the inner hole, the problem that chip breaking is accumulated in the inner hole to affect processing of the inner hole surface is avoided, and thus the niobium alloy target material with uniform and fine internal crystal grains and relatively low surface roughness value is obtained. The invention also provides the niobium alloy target material.

Description

technical field [0001] The invention relates to the technical field of target materials, in particular to a niobium alloy target material and a preparation method thereof. Background technique [0002] The target is the material used as the cathode in the sputtering deposition technique, which can be separated from the cathode in the form of molecules, atoms or ions under the impact of positively charged cations and redeposited on the surface of the anode. As a special electronic material with high added value, the target is widely used as a thin film material for sputtering cutting-edge technology. According to the application, the targets mainly include targets for the semiconductor field, targets for recording media, targets for display films, advanced touch screens and displays, optical targets and superconducting targets, etc. [0003] Magnetron sputtering is one of the main technologies for preparing thin film materials. It uses ion sources to generate ions, and the g...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/14
CPCC23C14/34C23C14/14C23C14/3414
Inventor 李桂鹏汪凯张国军吴红张春恒李兆博任萍任晓郭从喜
Owner NINGXIA ORIENT TANTALUM IND
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