Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Surface treatment method of substrate for solar cell

A solar cell and surface treatment technology, applied in post-processing, post-processing details, chemical instruments and methods, etc., can solve problems such as low light absorption rate and solar cell efficiency reduction, and achieve the effect of simplifying the process and reducing costs

Inactive Publication Date: 2016-08-17
HANWHA CHEMICAL CORPORATION
View PDF8 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] On the other hand, silicon-based solar cells, which are currently mass-produced as most solar cells, use silicon as a semiconductor substrate, and silicon as an indirect interband transition semiconductor, since only light with a bandgap energy greater than silicon Only electron-hole pairs can be generated, so the light absorption rate is low
Therefore, silicon-based solar cells reflect more than 30% of the light incident into the solar cell from the surface of the silicon crystal as the substrate, so the efficiency of the solar cell decreases

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Surface treatment method of substrate for solar cell
  • Surface treatment method of substrate for solar cell
  • Surface treatment method of substrate for solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0080] A p-type quasi-single crystal substrate (MLM wafer, Grade B) doped with group III element impurities is prepared. In the volume ratio of 1:3:2 containing HF, HNO 3 and H 2 In the solution of O, the substrate is immersed for 1 minute and 30 seconds at a temperature of 7° C. to perform the first wet etching, so as to simultaneously perform the cutting damage removal and the first texturing treatment. Through the first texturing treatment, the etching thickness from the surface is 3-5 μm.

[0081] Then, as etching gas using Cl 2 / SF 6 / O 2 A reactive ion etching process is performed. The ratio H / W of the height (Height) to the width (Width) of the pyramid structure formed by the reactive ion etching process is distributed in the range of 0.75˜1.1.

[0082] In the volume ratio of 1:15:17 containing HF, HNO 3 and H 2 In the solution of O, immerse the substrate for 30 seconds at a temperature of 25°C to perform the second wet etching. After the etching, the weight of ...

experiment example

[0088] Evaluation of Surface Treatment Results

[0089] Figure 4 This is a photograph taken at a 70,000-fold magnification of the surface of the substrate after the reactive ion etching step in Example 1 using a scanning electron microscope.

[0090] Figure 5 This is a photograph of the surface of the substrate after the reactive ion etching process and the second wet etching process in the above-mentioned Example 1 at a magnification of 5000 times and taken with a scanning electron microscope.

[0091] Image 6 It is a graph showing the reflectance of the substrate before the surface treatment and the reflectance of the substrate after the surface treatment process in the above-mentioned Example 1 and Comparative Example 1.

[0092] Electrical Performance Evaluation of Solar Cells

[0093] According to ASTM G-173-03, under AM1.5 light conditions, the photovoltaic tester (solar tester) of Hanwha Solarone Limited (HSOL) in China, that is, H.a.l.m cetis PV-products is ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
heightaaaaaaaaaa
widthaaaaaaaaaa
heightaaaaaaaaaa
Login to View More

Abstract

PROBLEM TO BE SOLVED: To provide a method of performing surface treatment of a substrate for solar cell, especially of a pseudo single crystal substrate, effectively regardless of the type and directivity of crystal.SOLUTION: In a method of performing surface treatment of a substrate for solar cell, a pyramid structure is formed on the surface of a substrate by performing a first wet etching step, a reactive ion etching step, and a second wet etching step. Such a pyramid structure contributes to enhancement of light absorption efficiency of a solar cell, by lowering the optical reflectance. Efficiency of a solar cell can be enhanced by performing surface treatment of a pseudo single crystal substrate effectively, regardless of the type and directivity of crystal.

Description

technical field [0001] The invention relates to a surface treatment method of a solar cell substrate. More specifically, it relates to a surface treatment method of a substrate for a solar cell capable of efficiently structuring the surface regardless of the type or quality of the lattice structure of the substrate. Background technique [0002] In recent years, in anticipation of the depletion of existing energy sources such as oil and coal, attention has been paid to alternative energy sources that will replace these energy sources. Among them, a solar cell is attracting attention as a next-generation battery utilizing a semiconductor element that directly converts solar energy into electric energy. Solar cells are divided into silicon solar cells (silicon solar cells), compound semiconductor solar cells (compound semiconductor solar cells) and laminated solar cells (tandem solar cells). [0003] On the other hand, silicon-based solar cells, which are currently mass-prod...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): C30B33/10H01L31/18
CPCY02E10/547Y02P70/50H01L31/02363H01L31/04
Inventor 尹起燦郭将荣金起弘金鍊起李秉喆崔锺亨韩奭奎洪定义
Owner HANWHA CHEMICAL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com