LED multi-quantum-well structure device and grow method

Abstract

The invention proves an LED multi-quantum-well structure device and a grow method. The device includes: an LED multi-quantum-well structure with an adjustable energy band, wherein the LED multi-quantum-well structure includes, from bottom to top, a barrier layer, a first potential-well layer with progressively decreasing indium component and a second potential-well layer with progressively increasing indium component, which grow alternatively in order. The structure changes the shape of the energy band reasonably and effectively through adjustment of the indium component in the potential wells. Two composite centers are formed at the two ends of a quantum-well active region and electron and cavitation wave function superposition areas are increased in the active region so that radiation composite efficiency is improved and thus light-emitting efficiency of an LED is improved. Moreover, progressive change of the In component can improve significantly work performance such as wavelength stability of the LED and the like. Therefore, the multi-quantum-well structure device is applicable to an InGaN-based blue-light and green-light LED and capable of improving inner quantum-well efficiency of an active region of the blue-light and green-light LED and thus improving the light-emitting efficiency of the LED.

Description

technical field [0001] The invention relates to semiconductor technology, in particular to an LED multi-quantum well structure device and a growth method. Background technique [0002] Wide bandgap materials represented by gallium nitride (GaN) are the third-generation semiconductor materials after silicon (Si) and gallium arsenide (GaAs), and are mainly used to make light emitting diodes (Light Emitting Diode, LED), Lasers, detectors, high-frequency high-power transistors and other electronic devices. [0003] Since the GaN-based material is an ionic crystal, its positive and negative charges do not overlap, forming spontaneous polarization. In addition, due to the lattice mismatch between InGaN and GaN materials, piezoelectric polarization will be caused, and then a piezoelectric polarization field will be formed. The piezoelectric polarization field causes the quantum confinement Stark effect (Quantum Confinement Stark Effect, QCSE), that is, the piezoelectric polarizat...

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Problems solved by technology

[0004] A triangular quantum well has been proposed to address the above problems, so that holes and electrons are confined to the lowest potential energy, so that the spatial separation of electrons and holes caused by the bending of the energy band caused by the piezoelectric polarization field will be slightly weakened, but the effect is limited.

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