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A CMOS RF Power Amplifier Integrated in System-on-Chip

A system-on-chip, radio frequency power technology, applied in power amplifiers, high-frequency amplifiers, improving amplifiers to improve efficiency, etc., can solve the problems of complex structure of power amplifiers, high production costs, and large temperature effects.

Active Publication Date: 2016-09-28
VERISILICON MICROELECTRONICS SHANGHAI +3
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In view of the above-mentioned shortcoming of prior art, the object of the present invention is to provide a kind of CMOS radio frequency power amplifier integrated in system on chip, be used to solve the complex structure of power amplifier in the prior art, the manufacturing cost is high, be affected greatly by temperature, Problems such as low output power

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  • A CMOS RF Power Amplifier Integrated in System-on-Chip
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  • A CMOS RF Power Amplifier Integrated in System-on-Chip

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Embodiment Construction

[0056] Embodiments of the present invention are described below through specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the content disclosed in this specification. The present invention can also be implemented or applied through other different specific implementation modes, and various modifications or changes can be made to the details in this specification based on different viewpoints and applications without departing from the spirit of the present invention.

[0057] see Figure 2 to Figure 7 . It should be noted that the diagrams provided in this embodiment are only schematically illustrating the basic idea of ​​the present invention, and only the components related to the present invention are shown in the diagrams rather than the number, shape and shape of the components in actual implementation. Dimensional drawing, the type, quantity and proportion of each component can be changed arb...

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Abstract

The invention provides a complementary metal-oxide-semiconductor transistor (CMOS) radio frequency power amplifier integrated on a system on chip. The power amplifier is integrated on the system on chip (SOC) to achieve the function of output signal power amplification, and the power amplifier comprises a biasing circuit, a first stage amplifying circuit, a second stage amplifying circuit, and an output matching circuit. The power amplifier is realized by using a CMOS process and well integrated on the SOC, and thus, power control and pulse width modulation (PWM) can be achieved by using a single chip; compared with prior power amplifiers realized by using discrete components or III-V group compound semiconductors, the power amplifier has the advantages that dual power is adjustable, an individual external control chip is not required, costs of an application system are greatly saved, system debugging is facilitated, multi-band frequency output power is adjustable, and the power amplifier can be widely applied to various application in the range of 10 MHz to 1 GHz.

Description

technical field [0001] The invention relates to a multi-band radio frequency integrated circuit technology applied in SOC, in particular to a CMOS radio frequency power amplifier integrated in an on-chip system. Background technique [0002] The RF power amplifier is located at the back end of the transmitter and is used to amplify the signal and achieve a certain output power. It can be used in a wireless communication system to amplify the modulated signal and drive the antenna to realize wireless communication. It can also be used in wired systems to drive specific industrial control systems. For example, this power amplifier can be used in wired industrial control systems to drive LEP lamp controllers. [0003] In recent years, with the rapid development of mobile communication and industrial control technology, more and more circuit systems are integrated into a chip, and the system-on-chip technology is becoming more and more mature. However, the core part of traditi...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03F1/30H03F1/02H03F3/189H03F3/20
Inventor 黄志忠卫秦啸苏杰
Owner VERISILICON MICROELECTRONICS SHANGHAI
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