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Discrete gate memory device and method of forming same

A storage device and discrete gate technology, applied in the field of discrete gate storage devices and their formation, can solve the problems of large write disturbance, poor programming and erasing efficiency and uniformity of discrete gate flash memory, etc., to reduce the entry The probability of floating gates, solving the problem of write disturbance, and the effect of reducing damage

Active Publication Date: 2016-02-17
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] The problem solved by the present invention is that the programming and erasing efficiency and uniformity of the discrete gate flash memory are not good, especially the write disturbance (disturb) is relatively large

Method used

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  • Discrete gate memory device and method of forming same
  • Discrete gate memory device and method of forming same
  • Discrete gate memory device and method of forming same

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Experimental program
Comparison scheme
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Embodiment Construction

[0045] refer to figure 1 , when the existing discrete gate flash memory is programmed, a positive voltage is applied to the control gate 103, a working voltage is applied to the word line 104 to open the channel region below, a negative voltage is applied to the drain region, the source region is grounded, and the voltage of the control gate 103 When the voltage is greater than the drain region, the electrons in the conductive channel will be accelerated to jump from the channel region to the floating gate 102 through the gap (gap) 10 between the word line 104 and the floating gate 102, and then complete the programming (writing) action; When the existing discrete gate flash memory is erased, the control gate 103 is grounded, the erasing gate 105 is positively charged, electrons tunnel from the floating gate 102 to the erasing gate 105, and the charges in the floating gate 102 are erased.

[0046] The inventors have found that the programming and erasing efficiency and uniform...

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Abstract

The invention provides a discrete gate storage device and a forming method thereof. The forming method of the discrete gate storage device includes: providing a substrate, forming a control gate structure on the substrate, the area between two adjacent control gate structures is an erasing gate area, and the two adjacent control gate structures are connected to the erasing gate structure. The opposite side of the gate area is the word line area; the first side wall is formed around the control gate structure; the second side wall is formed around the first side wall; the sacrificial side wall is formed around the second side wall; the floating gate is formed; Said sacrificial sidewall, exposing the part of the floating gate; forming a tunnel dielectric layer, forming a word line in the word line area, and forming an erasing gate in the erasing gate area. The invention also provides a discrete gate storage device. The first and second side walls of the present invention increase the isolation effect between word lines and control gates, word lines and floating gates, control gates and erasing gates, and improve the programming efficiency, uniformity and erasing efficiency of storage devices , uniformity, especially to reduce the leakage between the word line and the floating gate to solve the problem of write disturbance.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a discrete gate storage device and a forming method thereof. Background technique [0002] In the current semiconductor industry, integrated circuit products can be mainly divided into three types: analog circuits, digital circuits and digital / analog hybrid circuits, among which storage devices are an important type of digital circuits. In recent years, among storage devices, the development of flash memory (flash memory) is particularly rapid. The main feature of flash memory is that it can keep the stored information for a long time without power on; and it has the advantages of high integration, fast access speed, easy erasing and rewriting, etc. field has been widely used. [0003] The flash memory mainly includes a stacked gate flash memory and a discrete gate flash memory, wherein the discrete gate flash memory has the advantages of low programming voltage and high...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/8247H01L27/115H10B69/00
CPCH10B41/00H10B41/30
Inventor 李勇
Owner SEMICON MFG INT (SHANGHAI) CORP
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