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Method for estimating anti-total dose viability of component

A technology of anti-total dose and survivability, which is applied in the field of anti-total dose survivability prediction of components and anti-total dose survival probability estimation of MOS devices used in spacecraft in space environment, which can solve the use risk and component procurement cost Improvement, low device anti-total dose ability, etc., to achieve high detection efficiency and efficiency improvement

Active Publication Date: 2014-04-02
SHANGHAI SATELLITE ENG INST
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Problems solved by technology

[0004] If the anti-total dose capability index of MOS devices is too high, on the one hand, the procurement cost of components will increase greatly; It brings risks to the use of component purchasers

Method used

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  • Method for estimating anti-total dose viability of component
  • Method for estimating anti-total dose viability of component
  • Method for estimating anti-total dose viability of component

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Embodiment Construction

[0028] In order to make the object, technical solution and advantages of the present invention clearer, the implementation of the present invention will be further described in detail below in conjunction with the accompanying drawings. Apparently, the described embodiments are only some of the embodiments of the present invention, but not all of them. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without creative efforts belong to the protection scope of the present invention.

[0029] The problem to be solved by the present invention is how to conveniently and quickly classify and detect the anti-radiation ability of components and parts. On the basis of the degree, based on the statistical method of non-central t distribution, the design margin value (RDM) and PCC value of the radiation resistance test parameters of the components are calculated, and the components are adjusted according to the size...

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Abstract

The invention discloses a method for estimating the anti-total dose viability of a component. The method comprises the following step that the situation of logarithmic normal distribution of relation between the MOS (Metal Oxide Semiconductor) device anti-total dose survival probability and spatial environmental index requirements and total dose allowance is obtained, the anti-total dose survival probability of in-batch devices is related to a total dose effect invalid threshold standard difference sigma, and the survival probability can be improved by controlling the sigma in limited total dose allowance. By adopting the method, the estimation on the anti-total dose survival probability of devices in a spatial environment can be achieved by only controlling the total dose effect invalid threshold standard difference sigma, and the efficiency is greatly improved.

Description

technical field [0001] The invention relates to a method for estimating the anti-total dose survival probability of a component, in particular to a method for estimating the anti-total dose survivability of a component, in particular to a method for estimating the anti-total dose survival probability of a MOS device used in a spacecraft in a space environment. estimation method. Background technique [0002] There is a big difference between the electronic components used on the spacecraft and the electronic equipment on the ground: in addition to meeting various requirements on the ground, the electronic components on the spacecraft must also be able to adapt to the complex space environment, especially Space radiation environment. For this reason, the electronic components selected on the spacecraft must be able to resist the total dose effect. [0003] At present, aerospace usually purchases components from qualified suppliers for aerospace components, and puts forward ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01R31/26
Inventor 李强肖文斌宗益燕周秀峰
Owner SHANGHAI SATELLITE ENG INST
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