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Vertical microelectronic component and corresponding production method

A technology of microelectronic components and areas, applied in the direction of electrical components, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., to achieve the effects of low resistance, high power density, and small area consumption

Inactive Publication Date: 2014-03-26
ROBERT BOSCH GMBH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

This problem is particularly important for high voltage classes above 600 V, since in side elements a high compressive strength can only be achieved by increasing the distance between the gate connection and the discharge connection

Method used

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  • Vertical microelectronic component and corresponding production method
  • Vertical microelectronic component and corresponding production method
  • Vertical microelectronic component and corresponding production method

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Embodiment Construction

[0020] In the figures, identical reference numbers designate identical or functionally identical elements.

[0021] Figure 1a )-o) are schematic cross-sectional views for explaining a vertical microelectronic component according to an embodiment of the invention and the corresponding manufacturing method.

[0022] exist Figure 1a ), reference numeral 1 denotes a silicon-semiconductor base having a front side O and a backside R. On the front side O of the silicon-semiconductor base 1 a large number of fins 1a, 1b are formed by means of a trench etching process, between which there are recesses G in the silicon-semiconductor base. In this example, the etched recess G is selected such that it lies perpendicular to the (111) crystal plane in the silicon-semiconductor substrate 1 . The side walls of the fins 1a, 1b are denoted by reference S, and the upper faces thereof by T. The structure of the fins 1a, 1b can be one-dimensional (for example linear), but also two-dimensional ...

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Abstract

A vertical microelectronic component and a corresponding production method are realized. The vertical microelectronic component includes a semiconductor substrate having a front side (O) and a back side (R), and a multiplicity of fins (1a, 1b) formed on the front side (O). Each fin has a corresponding side wall (S) and an upper side (T) and is separated from other fins by trenches (G). Each fin includes a GaN / AlGaN heterolayer region formed on the side wall (S)and including an embedded channel region (K) extending essentially parallel to the side wall (S) and at least one gate interface region (G1-G4). The gate interface region (G1-G4) is arranged above the GaN / AlGaN heterolayer region and electrically insulated from the channel region in the associated trench on the side wall (S). A common source terminal region (SL) arranged above the fins is connected to a first end of the channel region (K) in a vicinity of the upper sides (T). A common drain terminal region (DL) arranged above the back side is connected to a second end of the channel region (K) in a vicinity of the front side (O).

Description

technical field [0001] The invention relates to a vertical microelectronic component and a corresponding manufacturing method. Background technique [0002] HEMT-transistors (High-Electron-Mobility Transistor=Transistor mit hoher Elektronenbeweglichkeit) are special structures of field-effect transistors which are especially suitable for use at high frequencies due to their low component capacitance. Starting from the structure, HEMT transistors are formed from layers of different semiconductor materials with band gaps of different sizes (so-called heterolayer structures), for which the material system GaN / AlGaN is used, for example. If the two materials are separated from each other, a two-dimensional electron gas is formed on both sides of the GaN at the interface of the materials, which can be used as a conductive channel because the electron mobility is very large in it. High. [0003] Conventional HEMT transistors with the material system GaN / AlGaN are produced in clo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/778H01L29/06H01L21/335
CPCH01L29/7855H01L29/66462H01L29/2003H01L29/42372H01L29/7788H01L29/1608H01L29/7789H01L21/18H01L29/778H01L2924/1033
Inventor C.舍林W.达夫斯
Owner ROBERT BOSCH GMBH
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