Plasma assisted magnetron sputtering depositing method

Abstract

The invention relates to a plasma assisted magnetron sputtering depositing coating method. When a metal compound thin film is prepared by magnetron sputtering, in order to overcome target poisoning, anode disappearance and the like, an intermediate frequency or pulse direct current reaction magnetron sputtering method is common adopted. The invention provides a novel plasma assisted depositing method, wherein a plasma discharge area is additionally arranged in a vacuum chamber, a work rest rotates at a high speed along with a revolution plate which revolves at the same time, and when a workpiece rotates through the plasma discharge area, combination reaction is further carried out on the incompletely reacted ultrathin thin film and gas ions to obtain a compound thin film with a higher stoichiometric ratio, so that the depositing rate of the thin film is greatly improved. Compared with conventional plasma source assisted depositing technologies, the novel plasma generating technology provided by the invention is lower in cost and easy to amplify, can be used for the field of industrialized production on a large scale, and has an important application prospect.

Description

technical field [0001] The invention relates to a new plasma-assisted magnetron sputtering deposition coating technology. Compared with the traditional plasma source-assisted deposition technology, the plasma-assisted deposition technology has low cost, strong engineering magnification, large workpiece loading, and easy deposition. The method has fast speed and high coating efficiency, can be used in large-scale industrial production lines, and has important application prospects in the field of magnetron sputtering coating. Background technique [0002] The development of modern surface engineering increasingly requires the use of various compound films, and reactive magnetron sputtering technology is one of the main ways to deposit compound films. Reactive magnetron sputtering uses high-purity metal targets and feeds certain reactive gases, such as oxygen and nitrogen, to react and deposit compound films. Since both the metal target and the gas are easy to obtain high pur...

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Problems solved by technology

However, because the condition range of the transition zone mode is very small, if the control is not proper, as the sputtering process progresses, the compound formed on the surface of the target will continue to increase, and the charge on the surface of the target will accumulate more and more, and the working state will be unstable. The transition mode enters the reaction mode, and the deposition rate drops sharply; in addition, it is difficult to obtain high-purity compound films when the film is prepared in the transition mode.

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