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Microwave thin-film capacitor integration method

An integrated method and microwave thin film technology, applied in the direction of thin film/thick film capacitors, laminated capacitors, etc., can solve the problems of large span of the upper electrode, defects in the connection between the upper electrode of the capacitor and the transmission line, and can not meet the design requirements, so as to reduce the production cost. Cost, meeting the requirements of electrical performance indicators, and the effect of production yield

Active Publication Date: 2014-03-05
CHINA ELECTRONIS TECH INSTR CO LTD
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  • Claims
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AI Technical Summary

Problems solved by technology

[0006] In the prior art, in order to ensure that the thin-film capacitor is connected in series in the circuit to the microwave signal standing wave ratio index, the width of the capacitor needs to be consistent with the microwave transmission line. For small-capacitance capacitors, a larger distance between electrodes is required to meet the requirements, which will make The upper electrode spans a large vertical drop, that is, it needs to cover a higher step, such as figure 1 As shown, there are great difficulties in the process of process realization. Even if the vacuum coating thickness of the upper electrode is increased, the complete coverage of the steps cannot be achieved, resulting in the connection defect between the upper electrode of the capacitor and the transmission line, which cannot meet the design requirements.

Method used

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Embodiment 1

[0029] In this embodiment, a capacitor is decomposed into several capacitors connected in series, so that the consistency of the circuit transmission line width can be maintained, and a capacitance value that meets the requirements can be designed, and the distance between electrodes of each capacitor can be reduced. To reduce the difficulty of process realization, taking 4 capacitors in series as an example, the design scheme and production process are as follows Figure 2-5 As shown, 201 is the substrate among the figure:

[0030] Step 1: Decompose a capacitor into a structure of several capacitors connected in series;

[0031] Step 2: Vacuum coating on the substrate and photoetching the lower electrode pattern such as figure 2 as shown in Section 202 of the

[0032] Step 3: Vacuum coating and photoetching the pattern of the dielectric layer such as image 3 as shown in Section 203 of the

[0033] Step 4: Vacuum coating and photoetching the upper electrode pattern such ...

Embodiment 2

[0038] On the basis of the above embodiment, further, in the first step, the series connection of the capacitors is a series connection of capacitors connected end to end.

[0039] On the basis of the above embodiment, further, in the first step, the number of capacitors is 4 capacitors.

[0040] On the basis of the above embodiments, further, in the first step, the capacitance values ​​of the several capacitors are equal or unequal.

[0041] On the basis of the above embodiments, further, in the third step, the material of the dielectric layer is a dielectric material with a large dielectric constant and a low dissipation factor.

[0042] On the basis of the above embodiments, further, in the third step, the thickness of the dielectric layer is 5000-100000 nm.

[0043] Adopting the above-mentioned scheme solves the difficult problem of making small-capacity thin-film capacitors by using dielectric materials with large dielectric constant and low loss factor, which can greatl...

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Abstract

The invention provides a microwave thin-film capacitor integration method. The microwave thin-film capacitor integration method comprises the steps that firstly, a capacitor is disassembled into a structure formed by a plurality of capacitor bodies which are connected in series; secondly, vacuum coating is conducted and lower electrode patterns are formed through photoetching; thirdly, vacuum coating is conducted and dielectric layer patterns are formed through photoetching; fourthly, vacuum coating is conducted and upper electrode patterns are formed through photoetching; fifthly, the upper electrode patterns and the lower electrode patterns are arranged through electroplating. By the adoption of the scheme, the problem that the technology for manufacturing a small-capacitance thin-film capacitor through a dielectric material which is large in dielectric constant and low in loss factor is difficult to achieve is solved.

Description

technical field [0001] The invention belongs to the technical field of microwave film capacitor integration, and in particular relates to a microwave film capacitor integration method. Background technique [0002] The rapid development of communication technology has greatly promoted the research of microwave materials and their devices, and the chip integration of microwave devices has become the development trend of radio frequency and microwave devices at present. Microwave thin film integrated capacitors came into being under such circumstances. . Since microwave thin film integrated capacitors have the characteristics of high integration, low loss and easy coupling, it is of great practical significance and practical value to realize the integration and high quality of microwave devices. In broadband microwave and millimeter wave microstrip circuits, the use of film capacitors can not only obtain larger capacitance values ​​per unit area, but also effectively reduce t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01G4/33
Inventor 王斌宋振国
Owner CHINA ELECTRONIS TECH INSTR CO LTD
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