A method for integrating microwave thin film capacitors

Abstract

The invention provides a microwave film capacitor integration method, step 1: decomposing a capacitor into a structure of several capacitors connected in series; step 2: vacuum coating and photoetching the lower electrode pattern; step 3: vacuum coating and photoetching the dielectric layer Pattern; step 4: vacuum coating and photoetching the pattern of the upper electrode; step 5: electroplating the pattern of the upper electrode and the pattern of the lower electrode. By adopting the above-mentioned solution, the difficult problem of technical realization of making small-capacity thin-film capacitors by using dielectric materials with large dielectric constant and low loss factor is solved.

Description

technical field [0001] The invention belongs to the technical field of microwave film capacitor integration, and in particular relates to a microwave film capacitor integration method. Background technique [0002] The rapid development of communication technology has greatly promoted the research of microwave materials and their devices, and the chip integration of microwave devices has become the development trend of radio frequency and microwave devices at present. Microwave thin film integrated capacitors came into being under such circumstances. . Since microwave thin film integrated capacitors have the characteristics of high integration, low loss and easy coupling, it is of great practical significance and practical value to realize the integration and high quality of microwave devices. In broadband microwave and millimeter wave microstrip circuits, the use of film capacitors can not only obtain larger capacitance values ​​per unit area, but also effectively reduce t...

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Problems solved by technology

[0006] In the prior art, in order to ensure that the thin-film capacitor is connected in series in the circuit to the microwave signal standing wave ratio index, the width of the capacitor needs to be consistent with the microwave transmission line. For small-capacitance capacitors, a larger distance between electrodes is required to meet the requirements, which will make The upper electrode spans a large vertical drop, that is, it needs to cover a higher step, such as figure 1 As shown, there are great difficulties in the process of process realization. Even if the vacuum coating thickness of the upper electrode is increased, the complete coverage of the steps cannot be achieved, resulting in the connection defect between the upper electrode of the capacitor and the transmission line, which cannot meet the design requirements.

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