Heterojunction solar battery with interface delta doping

Abstract

The invention discloses a heterojunction solar battery with interface delta doping. An emitter region of the solar battery adopts n-type GaInP, the thickness of the n-type GaInP is 40-100nm, a window layer is n-type AlInP or AlGaInP, the thickness of the window layer is 10-50nm, delta doping is adopted, and the density of the doping face is 1011-1013cm-2. Delta doping is carried out on the window layer around an interface of the AlInP layer or AlGaInP window layer and the GaInP emitter region. According to the heterojunction solar battery with interface delta doping, delta doping is carried out on the window layer at the interface of the window layer and the emitter region to improve transportation of carriers in the solar battery.

Description

technical field [0001] The invention relates to a solar cell, in particular to a heterojunction solar cell containing interface delta doping. Background technique [0002] Solar cells can directly convert solar energy into electrical energy, which can greatly reduce people's dependence on coal, oil and natural gas in production and life, and become one of the most effective ways to use green energy. The conversion efficiency of III-V semiconductor solar cells is the highest in the current material system. At the same time, it has the advantages of good high temperature resistance, strong radiation resistance, and good temperature characteristics. It is recognized as a new generation of high-performance and long-life space mainframes. Power supply has been widely used in aerospace field. With the continuous improvement of compound semiconductor growth technology (such as MOCVD), the efficiency of III-V solar cells has been greatly improved, and the efficiency of triple-junct...

AI Technical Summary

Problems solved by technology

How to further improve the conversion efficiency of III-V solar cells has become a current research hotspot. The introduction of the window layer forms a good passivation interface on the surface of the emission region, which improves the short-circuit current density and the open-circuit voltage. The most important thing is that the window layer generally needs to choose a material with a band gap larger than the emission region, which will form a potential barrier between the window layer and the emission region, hindering electron transport.

[0003] In traditional solar cells, in order to reduce the recombination rate of the front surface of the battery, it is necessary to passivate the emission area of ​​the cell, and the band gap of the window layer material must be higher than that of the cell base area and the emission area material, otherwise part of the light will be absorbed , reduce the performance of the battery, and the resulting problem is that the contact between the wide bandgap window layer and the narrow bandgap emission region will form a heterojunction barrier at the interface, which hinders the transport of minority carriers in the battery, such as figure 1 shown

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