Semiconductor element, integrated circuit, manufacturing method of semiconductor element and integrated circuit and electronic device

Abstract

The invention provides a semiconductor element, an integrated circuit, a manufacturing method of the semiconductor element and the integrated circuit and an electronic device, and relates to the technical field of semiconductors. The semiconductor element comprises a semiconductor substrate, a gate oxide layer and a gate electrode, wherein the gate oxide layer and the gate electrode are formed on the semiconductor substrate, the gate oxide layer is divided into two parts, namely a first part gate oxide layer located in the width edge area of the gate electrode and a second part gate oxide layer located in the middle area of the gate electrode, and the thickness of the first part gate oxide layer is larger than that of the second part gate oxide layer. The integrated circuit adopts the semiconductor element. The invention provides the manufacturing method of the semiconductor element and the integrated circuit and the electronic device adopting the integrated circuit. The semiconductor element, the integrated circuit, the manufacturing method of the semiconductor element and the integrated circuit and the electronic device effectively reduce the narrow channel effect of elements, especially kernel elements, in the semiconductor element and the integrated circuit, improve the performance of the semiconductor element, the integrated circuit adopting the semiconductor element and the electronic device adopting the integrated circuit.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device, an integrated circuit, their manufacturing method and an electronic device. Background technique [0002] A semiconductor device is an important part of a semiconductor integrated circuit. Generally speaking, a semiconductor integrated circuit includes a core device (core device) and an input / output device (I / O device), both of which are semiconductor devices. In integrated circuits manufactured by existing manufacturing methods, especially in integrated circuits using shallow trench isolation (Shallow trench isolation, referred to as STI) technology, due to process factors, the thickness of the gate oxide layer (gate oxide) of the core device , the edge area (corner) of the core device is smaller than the central area (center). Among them, the central region of the device refers to the region close to the center of the device along the width direc...

AI Technical Summary

Problems solved by technology

[0004] In the integrated circuits manufactured by the prior art, due to the above-mentioned problems, the thickness of the gate oxide layer in the edge region of the device, especially the core device, is relatively thin (relative to the middle region), which is easy to cause problems in the operation of the integrated circuit. During the process, the electric field is concentrated in the edge region of the device, which leads to the opening of the parasitic device in the edge region earlier than the normal device, which will easily cause the narrow channel effect (Narrow width effect; NWE for short) of the device.

For integrated circuits, the narrow channel effect of the device will lead to an increase in the threshold voltage of the transistor, which should be overcome or reduced as much as possible.

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