Quantum dot stacking structure and manufacturing method thereof and light emitting component
A technology of stacking structure and light-emitting elements, applied in electrical components, semiconductor devices, circuits, etc., can solve the problems of poor light conversion efficiency, self-aggregation, uneven thickness, etc.
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[0030] reference Figure 1 to Figure 7 , Showing a schematic diagram of an embodiment of the method for manufacturing the quantum dot stack structure of the present invention. reference figure 1 , Provide a substrate layer 10. The substrate layer 10 is made of a light-transmissive material. In this embodiment, the substrate layer 10 is glass; however, in other embodiments, the substrate layer 10 may also be made of plastic or other flexible materials. Next, a bottom spacer layer 12 is formed on the substrate layer 10. The bottom spacer layer 12 is made of a flexible and light-permeable material, and contains a polymer silicon oxide compound. In this embodiment, the polymer silicon-oxygen compound contains a methyl group, for example, poly-dimethylsiloxane (PDMS). In addition, the bottom spacer layer 12 has the characteristics of low surface tension. Preferably, the surface tension is lower than 30 dyne / cm. In this embodiment, the bottom spacer layer 12 is a film, which is at...
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