Rapid freezing method of polycrystalline silicon

A technology of polycrystalline silicon and directional solidification, which is applied in chemical instruments and methods, silicon compounds, inorganic chemistry, etc., can solve the problems of low yield and high proportion of ingots, and achieve the effect of easy breaking

Inactive Publication Date: 2014-01-29
DALIAN UNIV OF TECH
View PDF8 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the reverse diffusion of the top of the enriched impurities, the proportion of the top ingot that needs to be removed is much higher than the theoretical one, which in turn leads to a greatly reduced yield

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Rapid freezing method of polycrystalline silicon

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] A polysilicon reverse solidification device includes a furnace body 400, a vacuum system, an air filling system, a directional solidification smelting system, a top lifting mechanism, a bottom lifting mechanism, pipes for connection, and valves arranged on the furnace body and each pipe.

[0032] The vacuum system includes a mechanical pump and a Roots pump, a vacuum pipeline communicated with the furnace body and a vacuum gauge.

[0033] The inflation system includes an argon gas tank, an inflation pipeline, a pressure gauge and a flow meter.

[0034] The top lifting mechanism includes a top lifting and rotating device 101, the lower end of the top lifting and rotating device 101 is fixed with a water-cooled metal rod 102, and the other end of the water-cooled metal rod 102 is fixed with a water-cooled copper plate 103; the top lifting and rotating device 101 is located outside the furnace body 400 , the water-cooled metal rod 102 passes through the upper surface of th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
lengthaaaaaaaaaa
Login to view more

Abstract

The invention relates to a reverse freezing method of polycrystalline silicon, and belongs to the field of polycrystalline silicon production. The rapid freezing method of polycrystalline silicon comprises the steps of preparing materials, smelting and freezing. The freezing method comprises the following steps of: directionally freezing silicon liquid in a polycrystalline silicon reverse freezing device until the volume of remained silicon liquid is 1-25% of the initial volume; and contacting a water cooling copper plate at 0-500 DEG C with the remained silicon liquid until the remained silicon liquid is frozen. By adopting the rapid freezing method of polycrystalline silicon, strong condensate depression is formed after the water cooling copper plate enters the upper surface of silicon liquid, so that silicon liquid can be frozen rapidly and large stress is formed to break easily, reverse diffusion of impurities is inhibited and post processing is facilitated.

Description

technical field [0001] The invention relates to a polysilicon reverse solidification method, which belongs to the field of polysilicon production. Background technique [0002] At present, in the directional solidification purification of industrial silicon, the ingot is purified from the bottom to the top, and the impurities are enriched at the top, and the top of the enriched impurities needs to be cut off during production. Due to the reverse diffusion of the top of the enriched impurities, the proportion of the top ingot that needs to be removed is much higher than the theoretical one, which in turn leads to a greatly reduced yield. Using the method of rapid solidification at the top can suppress the back diffusion to increase the yield and can conveniently and quickly cut off the ingots containing enriched impurities. Contents of the invention [0003] The purpose of the present invention is to provide a polysilicon reverse solidification method. [0004] A method f...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/037
Inventor 姜大川任世强石爽李鹏廷谭毅
Owner DALIAN UNIV OF TECH
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap